中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2022, Vol. 22 ›› Issue (12): 120307 . doi: 10.16257/j.cnki.1681-1070.2023.1213

• 电路与系统 • 上一篇    下一篇

用于Si-PIN探测器的小尺寸电荷灵敏前置放大器的设计

张玲玲;何资星;郭凤丽   

  1. 中国电子科技集团公司第五十八研究所,江苏 无锡 214035
  • 收稿日期:2022-05-23 发布日期:2022-11-18
  • 作者简介:张玲玲(1970—),女,江苏泰兴人,本科,高级工程师,现从事特种器件研制。

Design of a Small-Size Charge-Sensitive Preamplifier for Si-PIN Detectors

ZHANG Lingling, HE Zixing, GUO Fengli   

  1. China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035, China
  • Received:2022-05-23 Published:2022-11-18

摘要: 设计了一种用于Si-PIN探测器的小尺寸电荷灵敏前置放大器,该放大器采用低噪声、高带宽、双通道运放芯片AD8066,简化了电路结构,减小了空间体积,实现了电荷灵敏前放与成形电路的一体化设计。经过测试发现,在室温环境下,该放大器能有效对241Am源和137Cs源γ射线进行探测,其测量电子学等效输入噪声约为0.15 fC,成形时间约为2.5 ms,在0.5~100 fC的动态输入电荷范围内,放大增益达24 V/pC,且稳定性良好。此外,该放大器的时间响应速度达10 ns,可应用于高计数率辐射环境下的γ射线探测。

关键词: Si-PIN探测器, 电荷灵敏前置放大器, γ射线

Abstract: A small-size charge-sensitive preamplifier for Si-PIN detectors is designed. In the amplifier, a dual-channel amplifier chip AD8066 with low noise and high broadband is used to simplify the circuit structure, reduce the space volume, and realize the integrated design of charge-sensitive preamplifier and shaping circuit. After testing, it has found that the amplifier can effectively detect γ rays of 241Am and 137Cs source at room temperature. The measurement electronics equivalent input noise is about 0.15 fC and the shaping time is about 2.5 μs. The amplification gain is up to 24 V/pC in the dynamic input charge range of 0.5 to 100 fC, and it has a strong stability. In addition, the amplifier has a time response speed of 10 ns, which can be applied to γ-ray detection in a high count rate radiation environment.

Key words: Si-PIN detectors, charge-sensitive preamplifier, γ rays

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