等离子增强化学气相沉积法低温生长SiOx薄膜的针孔缺陷修复

doi:10.16257/j.cnki.1681-1070.2020.0112

电子与封装 ›› 2020, Vol. 20 ›› Issue (1): 010301 . doi: 10.16257/j.cnki.1681-1070.2020.0112

等离子增强化学气相沉积法低温生长SiO_x薄膜的针孔缺陷修复

刘键，胡跃明，冷兴龙，杜鹃

1. 中国科学院微电子研究所，北京　100029；2. 华南理工大学自动化科学与工程学院，广州　510640

收稿日期:2019-09-06 出版日期:2020-01-15 发布日期:2020-01-15
作者简介:刘　键（1963—），男，河北人，博士，研究员，现从事微电子设备及工艺研究。

Repair Technology of Pinhole Defect in SiO_x Thin Films Grown at Low Temperature by Plasma Enhanced Chemical Vapor Deposition

LIU Jian, HU Yueming, LENG Xinglong, DU Juan

1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; 2. School of Automation Science and Engineering, South China University of Technology, Guangzhou 510640, China

Received:2019-09-06 Online:2020-01-15 Published:2020-01-15

摘要/Abstract

摘要： 针对等离子增强化学气相沉积（PECVD）方法低温（60 ℃）生长氧化硅（SiOx）薄膜中存在的针孔缺陷，在SiOx薄膜上采取原子层沉积（ALD）方法生长氧化铝（AlOy），利用ALD方法材料保形生长的特点，进行SiOx薄膜的针孔缺陷修复工艺技术研究。实验结果表明：在SiOx薄膜上利用ALD方法保形生长氧化铝，可以明显降低AlOy/SiOx复合薄膜的水汽渗透率，提高薄膜封装性能。通过实验数据分析认为：复合薄膜的水汽阻隔能力是由于ALD方法及PECVD方法两种薄膜生长方法的综合作用，这种综合作用很有可能来自PECVD方法薄膜中针孔缺陷的修复，而ALD方法正是完成修复过程的技术手段。另外，ALD方法的工艺参数与针孔缺陷的修复效果相关，ALD生长周期时间延长，有利于提高针孔缺陷的修复效果，从而降低了复合薄膜的水汽渗透率。

关键词: 薄膜封装, 针孔缺陷, 水汽渗透率

Abstract: Focus on the pinhole defects in SiOx thin films grown by plasma enhanced chemical vapor deposition (PECVD) at low temperature (60 ℃), alumina (AlOy) was grown on SiOx thin films by atomic layer deposition (ALD). A study on repair technology of pinhole defect in SiOx thin films was carried on based on conformal growth of ALD materials. The experimental results show that the water or oxygen permeability of AlOy/SiOx composite films can be significantly reduced and the packaging performance of the films can be improved by using ALD method to grow alumina conformally on SiOx films. The experimental data show that the water or oxygen barrier ability of the composite films comes from the combined effect of two film growth methods (ALD and PECVD). The result of the combined effect probably comes from the repair of pinhole defects in PECVD films, and ALD is the technical means to complete the repair process. In addition, the process parameters of ALD are related to the repair effect of pinhole defects. The longer the growth period of ALD is, the better the repair effect of pinhole defects, thus reducing the water or oxygen permeability of the composite films.

Key words: film packaging, pinhole defects, water vapor transmission rate

中图分类号:

TN305.5

刘键¹，胡跃明²，冷兴龙¹，杜鹃². 等离子增强化学气相沉积法低温生长SiO_x薄膜的针孔缺陷修复[J]. 电子与封装, 2020, 20(1): 010301 .

LIU Jian¹, HU Yueming², LENG Xinglong¹, DU Juan². Repair Technology of Pinhole Defect in SiO_x Thin Films Grown at Low Temperature by Plasma Enhanced Chemical Vapor Deposition[J]. Electronics & Packaging, 2020, 20(1): 010301 .

参考文献

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

等离子增强化学气相沉积法低温生长SiOx薄膜的针孔缺陷修复

Repair Technology of Pinhole Defect in SiOx Thin Films Grown at Low Temperature by Plasma Enhanced Chemical Vapor Deposition

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等离子增强化学气相沉积法低温生长SiO_x薄膜的针孔缺陷修复

Repair Technology of Pinhole Defect in SiO_x Thin Films Grown at Low Temperature by Plasma Enhanced Chemical Vapor Deposition