GaN HEMT器件表面钝化研究进展*

doi:10.16257/j.cnki.1681-1070.2024.0168

摘要/Abstract

摘要： 作为第三代半导体材料之一，GaN凭借其优异的材料特性，如较高的击穿场强、较高的电子迁移率以及较好的热导率等，在制备高频、高功率及高击穿电压的AlGaN/GaN HEMT器件方面得到广泛应用。然而，目前电流崩塌、栅泄漏电流、频率色散等一系列可靠性问题制约着AlGaN/GaN HEMT器件的大规模应用。表面钝化被认为是改善这些问题最有效的方法之一。对电流崩塌、界面态等的测试表征方法等进行了总结，综述了目前GaN表面钝化的研究进展。

关键词: GaNHEMT器件, MIS-HEMT, 钝化, 电流崩塌, 栅泄漏电流

Abstract: As one of the third-generation semiconductor materials, GaN has been widely used in the preparation of high-frequency, high-power and high-breakdown voltage AlGaN/GaN HEMT devices due to its excellent material properties, such as high-breakdown field strength, high electron mobility and good thermal conductivity. However, there are still a series of reliability problems such as current collapse, gate leakage current and frequency dispersion, which restrict the large-scale application of AlGaN/GaN HEMT devices. Surface passivation is considered to be one of the most effective methods to improve these problems. The test and characterization methods of current collapse and interface state are summarized, and the research progress of GaN surface passivation is reviewed.

Key words: GaN HEMT device, MIS-HEMT, passivation, current collapse, gate leakage current

中图分类号:

陈兴, 党睿, 李永军, 陈大正. GaN HEMT器件表面钝化研究进展^*[J]. 电子与封装, 2024, 24(12): 120401 .

CHEN Xing, DANG Rui, LI Yongjun, CHEN Dazheng. Research Progress in Surface Passivation of GaN HEMT Devices[J]. Electronics & Packaging, 2024, 24(12): 120401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

GaN HEMT器件表面钝化研究进展^*

Research Progress in Surface Passivation of GaN HEMT Devices

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