[1] BHUIYAN A G, SUGITA K, HASHIMOTO A, et al. InGaN solar cells: present state of the art and important challenges[J]. IEEE Journal of Photovoltaics, 2012, 2(3): 276-293. [2] 曹文彧, 张雅婷, 魏彦锋, 等. 超晶格插入层对InGaN/GaN多量子阱的应变调制作用[J]. 物理学报, 2024, 73(7): 077201. [3] KHAIRUDDIN N S, YUSOFF M Z M, HUSSIN H. Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)[J]. Journal of Optics, 2025, 54(5): 2913-2924. [4] FANG Y, VASILESKA D, HONSBERG C, et al. High temperature InGaN solar cell modeling[C]// 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), New Orleans, LA, USA, 2015: 1-5. [5] GHAZI H E, RAMAZAN Y E, EN-NADIR R. Numerical analysis of InGaN/GaN intermediate band solar cells under X-Sun concentration, in-compositions, and doping: unlocking the potential of concentrated photovoltaics[J]. Arabian Journal for Science and Engineering, 2024, 49(7): 9885-9894. [6] ZHAO Y J, HUANG X Q, FU H Q, et al. InGaN-based solar cells for space applications[C]// 2017 IEEE 60th International Midwest Symposium on Circuits and Systems (MWSCAS), Boston, MA, USA, 2017: 954-957. [7] WEI Z Q, AL-NUAIMI N, GEMMING S. Optimization of InGaN-based solar cells by numerical simulation: Enhanced efficiency and performance analysis[J]. Next Materials, 2025, 6: 100325. [8] ZHANG T F, SI Y Y, LI Y J, et al. Research status and prospect of lead zirconate-based antiferroelectric films[J]. Acta Physica Sinica, 2023, 72(9): 097704. [9] JANI O, FERGUSON I, HONSBERG C, et al. Design and characterization of GaN∕InGaN solar cells[J]. Applied Physics Letters, 2007, 91(13): 132117. [10] KUMAWAT U K, KUMAR K, BHARDWAJ P, et al. Indium-rich InGaN/GaN solar cells with improved performance due to plasmonic and dielectric nanogratings[J]. Energy Science & Engineering, 2019, 7(6): 2469-2482. [11] FENG S W, LAI C M, TSAI C Y, et al. Modeling of InGaN p-n junction solar cells[J]. Optical Materials Express, 2013, 3(10): 1777. [12] YIN H J, QIAN Y P, XIE L Y, et al. Electrocatalytic activity of InN/InGaN quantum dots[J]. Electrochemistry Communications, 2019, 106: 106514. [13] SINGH P, RAVINDRA N M. Temperature dependence of solar cell performance: an analysis[J]. Solar Energy Materials and Solar Cells, 2012, 101: 36-45. [14] MARUSKA H P, TIETJEN J J. The preparation and properties of vapor-deposited single-crystal-line GaN[J]. Applied Physics Letters, 1969, 15(10): 327-329. [15] ANDREWS J E, LITTLEJOHN M A. Growth of GaN thin-films from triethylgallium monamine[J]. Journal of the Electrochemical Society, 1975, 122(9): 1273-1275. [16] CUBAS J, PINDADO S, DE MANUEL C. Explicit expressions for solar panel equivalent circuit parameters based on analytical formulation and the lambert W-function[J]. Energies, 2014, 7(7): 4098-4115. [17] BOUZIDI M, RAHMOUNE M B, NASRI A, et al. Extracting electrical parameters of solar cells using Lambert function[J]. Diagnostyka, 2024, 25(2): 188466. [18] KHAN F, BAEK S H, PARK Y, et al. Extraction of diode parameters of silicon solar cells under high illumination conditions[J]. Energy Conversion and Management, 2013, 76: 421-429. [19] HAMDY M A. Determination of the solar cell equation parameters: new methods, existing methods, analysis and comparison[M]. The University of Arizona, 1985. [20] KHAN F, BAEK S H, KIM J H. Intensity dependency of photovoltaic cell parameters under high illumination conditions: an analysis[J]. Applied Energy, 2014, 133: 356-362.
|