用于高压ESD防护的高维持电流SCR器件

doi:10.16257/j.cnki.1681-1070.2019.0511

电子与封装 ›› 2019, Vol. 19 ›› Issue (5): 045 -48. doi: 10.16257/j.cnki.1681-1070.2019.0511

• 微电子制造与可靠性 • 上一篇

用于高压ESD防护的高维持电流SCR器件

肖家木¹，乔明^1,2，齐钊¹，梁龙飞¹，曹厚华²

1.电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054；2.电子科技大学广东电子信息工程研究院，广东东莞 523808

收稿日期:2019-01-27 出版日期:2019-05-19 发布日期:2019-05-19
作者简介:肖家木（1993—），男，福建沙县人，电子科技大学硕士研究生，2016年电子科技大学微电子技术专业本科毕业，从事高压功率集成技术、功率器件可靠性及集成电路ESD 保护等的研究工作。

A High Holding Current SCR（HHI-SCR）for High Voltage ESD Protection

XIAO Jiamu¹,QIAO Ming^1,2,QI Zhao¹,LIANG Longfei¹,CAO Houhua²

1.State Key Laboratory of Electronic Thin Films and Integrated Device,UESTC,Chengdu 610054,China；2.Institute of Electronic and Information Engineering of UESTC in Guangdong,UESTC,Dongguan 523808,China

Received:2019-01-27 Online:2019-05-19 Published:2019-05-19

摘要/Abstract

摘要： 静电释放(ESD)是指电荷在两个电势不等的物体之间转移的物理现象，它存在于人们日常工作生活的任意环节。随着集成电路特征尺寸不断减小、集成度不断增高，芯片对ESD 也变得越来越敏感。为了用尽可能小的版图面积来实现ESD 防护，利用晶闸管结构（SCR）来实现集成电路的ESD 防护已成为当下的研究热点。但传统SCR 的维持电压和维持电流都很低，若直接将其应用于电源ESD 防护则会导致严重的闩锁效应（latch-up）。基于高维持电流设计窗口，提出一种可用于15 V电路的抗闩锁SCR 器件，并通过混合仿真验证了该器件的有效性。

关键词: ESD 防护, SCR, 高维持电流, 闩锁效应

Abstract: Electro-static discharge(ESD)is a physical phenomenon of charge transfer between two bodies with different potentials.It exists in any part of human's daily life and work.As the feature size of IC is decreasing and the integration is increasing,the chips are becoming more and more sensitive to ESD.In order to achieve the ESD protection with the possible smallest layout area,applying silicon control rectify (SCR)to achieve ESD protection of ICs has become a research hotspot.However,the holding voltage and holding current of traditional SCR are very low.If it is applied directly to ESD protection of power supply, it will lead to severe latch up effect.Based on high holding current design window, a kind of latch-up free SCR device for 15 V circuit is proposed,and the effectiveness of this device is verified by a mixed simulation.

Key words: ESD protection, SCR, high holding current, latch up effect

中图分类号:

TN406

肖家木，乔明，齐钊，梁龙飞，曹厚华. 用于高压ESD防护的高维持电流SCR器件[J]. 电子与封装, 2019, 19(5): 045 -48.

XIAO Jiamu,QIAO Ming,QI Zhao,LIANG Longfei,CAO Houhua. A High Holding Current SCR（HHI-SCR）for High Voltage ESD Protection[J]. Electronics & Packaging, 2019, 19(5): 045 -48.

参考文献

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用于高压ESD防护的高维持电流SCR器件

A High Holding Current SCR（HHI-SCR）for High Voltage ESD Protection

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