关键词: 8 英寸IC 外延, 温度, 离子注入片

Abstract: Accurate temperature control is the key to IC epitaxy.Based on the 8-inch ion implanted wafer,the key factors affecting the temperature of single wafer epitaxial equipment were investigated.The experimental results indicated that the temperature at edge changed with ΔT by changing OFFSET parameter.However,the temperature at center and R/2 were not affected.When the central thermocouple installation position reduced 254 μm, the temperature of epitaxial equipment would increase 10 ℃.The overshoot of temperature curve,caused by the abnormal PID parameter setting,affected the actual temperature of the epitaxial equipment.The experimental data quantified the corresponding relationship between related factors and temperature of epitaxial equipment, provided the basis for temperature control of IC epitaxial products, and improved the construction level of single silicon wafer epitaxial standardization and industrialization platform.

Key words: 8-inch IC epitaxy, temperature, ion implanted wafer