中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2020, Vol. 20 ›› Issue (7): 070404 . doi: 10.16257/j.cnki.1681-1070.2020.0710

• 微电子制造与可靠性 • 上一篇    下一篇

GaN HEMT双指热耦合关系的研究

肖立杨   

  1. 电子科技大学电子科学与工程学院,成都 610054
  • 接受日期:2020-03-10 发布日期:2020-04-02
  • 作者简介:肖立杨(1995—),男,湖北孝感人,电子科技大学电子科技与工程学院硕士研究生,主要研究方向为GaN HEMT器件热优化。

Research on GaN HEMT Double Finger Thermal Coupling Relationship

XIAO Liyang   

  1. School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
  • Accepted:2020-03-10 Published:2020-04-02

摘要: 为研究GaN HEMT多指结构器件中发热指之间的热耦合问题,该文通过分析基于有限元的双指结构器件的仿真数据,得到两发热指之间热耦合的强度与两者所处版图不同位置无关这一结果。通过建立热路模型分析论证这种热耦合关系产生的原因,最后通过模型进一步解释了器件整体热阻与发热指功率的关系。

关键词: GaN HEMT, 多指, 热耦合, 有限元

Abstract: In order to study the thermal coupling between multi-fingers in a GaN HEMT device, this paper analyzes the two-finger finite element simulation data to obtain that the strength of the thermal coupling between the two heating fingers is independent of the different locations in the layout. As a result, the reason for this thermal coupling relationship was derived by establishing a thermal circuit model. Finally, the relationship between the thermal resistance of the device and the power of the finger was further explained by the model.

Key words: GaN HEMT, multi-finger, thermal coupling, finite element

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