关键词: 隧道击穿, 结构设计, 氧化工艺

Abstract: This paper introduces the technology of fabricating low voltage regulator diode by plane structure design and Si epitaxial process. The technology demonstrates that the breakdown mechanism of Si planar junction 5.1V low-voltage voltage regulating diode is tunnel breakdown. Meanwhile, the structure of a new Si planar junction low-voltage regulating diode and the process corresponding to this structure are designed to realize the breakdown voltage characteristic of 5.1V as hard breakdown. The key technologies of hard breakdown optimization are structural design and in-depth study of oxidation process.

Key words: tunnelbreakdown, structuredesign, oxidationprocess