关键词: 瞬时剂量率效应, 数值模拟, 二极管, 光电流

Abstract: For researching the photocurrents of parasitic PN diode caused by the transient dose rate effect in SOI MOS devices. PN diode in 0.13 μm SOI process is modeled by using TCAD tools in this paper. The relationship between the optical-currents and theγdose rate is released by numeric simulation. The ability of anti-transient dose rate radiation is evaluated between the two type diodes through different bias voltages and different transient dose rates. When the dose-rate is reaching 1×10¹⁴ rad(Si)/s，the optical-current of diode caused by transient dose rate is about 20 % larger than that before the radiation. The conclusion of diode numeric simulation provides the reference for anti-transient dose rate in MOS devices.

Key words: transientdoserateeffect, numericsimulation, diode, optical-current