中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2017, Vol. 17 ›› Issue (4): 16 -19. doi: 10.16257/j.cnki.1681-1070.2017.0046

• 电路设计 • 上一篇    下一篇

用于X波段相控阵系统的高线性度低附加相移数字衰减器设计

邓青,汪粲星,万川川,张浩   

  1. 南京电子技术研究所,南京 210039
  • 收稿日期:2017-02-27 出版日期:2017-04-20 发布日期:2017-04-20
  • 作者简介:邓 青(1975—),男,江苏南京人,工学博士,2007年进入南京电子技术研究所工作,主要从事数字信号处理和数模混合通信系统的设计和研究。

A High Linearity Digital Attenuator with Low Phase Variations for X-band Phased Array Systems

DENG Qing,WANG Canxing,WAN Chuanchuan,ZHANG Hao   

  1. Nanjing Research Institute of Electronics Technology,Nanjing 210039,China
  • Received:2017-02-27 Online:2017-04-20 Published:2017-04-20

摘要: 设计了一款应用于X波段相控阵系统的6位数字衰减器,该衰减器具有高线性度和低附加相移的特点。对常规开关Pi型衰减器的附加相移和线性度进行了分析,通过电感和电容补偿技术,实现了在宽带频率范围和不同衰减状态下都具有低的附加相移。此外,利用浮动衬底技术来实现较高的线性度。该衰减器基于0.13μm的BiCMOS工艺设计。仿真结果显示该衰减器的插入损耗为6.67 dB,10 GHz下在最小衰减和最大衰减处的1 dB压缩点输入功率分别为15.5 dBm和10 dBm。

关键词: X波段, 衰减器, 相位校正, 高线性度, 相控阵, TSV, BiCMOS

Abstract: A new 6 bit high linearity digital attenuator with low phase variations for X-band phased array systems is presented in the paper.After detailed analysis of the phase variation and linearity of conventional switched Pi attenuators,the paper uses the inductive and capacitive compensation technologies to enable the low phase variation at different attenuation states in a broadband frequency range.In addition,the floating substrate technique is applied to obtain high linearity.The attenuator is fabricated in 0.13 μm BiCMOS process.The simulation results of the proposed attenuator achieves 6.67 dB insert loss,the input power of minimumattenuation and maximumattenuation at 1 dB compression pointare 15.5 dBm and 21 dBm at 10 GHz.

Key words: X-Band, attenuator, phase correction, high linearity, phased array, TSV, BiCMOS

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