横向超结器件耐压与比导的优值仿真与实验验证

doi:10.16257/j.cnki.1681-1070.2020.1003

电子与封装 ›› 2020, Vol. 20 ›› Issue (10): 100401 . doi: 10.16257/j.cnki.1681-1070.2020.1003

横向超结器件耐压与比导的优值仿真与实验验证

杨昆;乔明;何俊卿;王睿

电子科技大学电子薄膜与集成器件国家重点实验室，成都　610054

收稿日期:2020-04-03 发布日期:2020-05-12
作者简介:杨昆（1992—），男，四川眉山人，电子科技大学硕士研究生，研究方向为高压功率集成电路与功率超结器件。

Simulation and Experimental Verification of theOptimal Values of Voltage and Specific Conductance of Lateral Super JunctionDevices

YANG Kun, QIAO Ming, HE Junqing, WANG Rui

State Key Laboratory of Electronic Thin Films and Integrated Device, UESTC, Chengdu 610054, China

Received:2020-04-03 Published:2020-05-12

摘要/Abstract

摘要： 从超结电荷场对电势场的调制机理出发，以等效衬底模型（ES模型）和理想衬底条件为指导，在横向SOI超结器件中利用电荷补偿的思想得到理想衬底。对于已拥有理想衬底的横向超结器件固定其条宽W，长度L_SJ，不断增加超结浓度N_SJ，并观察得到的仿真结果，通过计算F_OM=V_B²/R_on_×_sp的值发现优质在6×10¹⁶cm^-3掺杂浓度下所对应的击穿电压V_B(Voltage-Breakdown )和比导通导通电阻（specific on-resistance R_on_×_sp）最佳折中关系。利用此思想在0.5 μm工艺平台上通过对不同的超结注入剂量的实验，实现了0.8 μm超结条宽下横向超结器件的最高优值。

关键词: 超结器件, 导通电阻Ron, 击穿电压VB

Abstract: Based on the modulation mechanism of the superjunction charge field to the potential field and guided by the equivalent substrate model (ES model) and the ideal substrate conditions. The ideal substrate is obtained by the charge compensation method in the lateral SOI superjunction device. For the lateral superjunction device with the ideal substrate, the width W and length L_SJare fixed, and the concentration of the superjunction N_SJ is continuously increased, and the simulation results are observed. It is found that the best compromise between voltage breakdown V_B and specific on-resistance R_on,sp is obtained at a certain doping concentration by calculating the value of F_OM=V_B²/R_on.sp. By using this idea, the different injection doses of superjunction are experimented on a 0.5 μm process platform, and the possible optimal injection dose is covered. The lowest specific on resistance of the lateral super junction device under the width of 0.8 μm superjunction piller is achieved experimentally.

Key words: superjunction devices, specific on-resistance Ron,sp, voltage breakdown VB

中图分类号:

TN305

杨昆;乔明;何俊卿;王睿. 横向超结器件耐压与比导的优值仿真与实验验证[J]. 电子与封装, 2020, 20(10): 100401 .

YANG Kun, QIAO Ming, HE Junqing, WANG Rui. Simulation and Experimental Verification of theOptimal Values of Voltage and Specific Conductance of Lateral Super JunctionDevices[J]. Electronics & Packaging, 2020, 20(10): 100401 .

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横向超结器件耐压与比导的优值仿真与实验验证

Simulation and Experimental Verification of theOptimal Values of Voltage and Specific Conductance of Lateral Super JunctionDevices

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