关键词: 雪崩光电二极管, 高能注入, 反向击穿

Abstract: The implantation energy of the avalanche region has the significant influence on the device performance in the silicon avalanche photodiodes, and the processes of high implantation energy with large beams require high facilities costs. Through theoretical simulations and experimental tape-out, while modulating the implantation energy and improving the diffusion time of the avalanche region, the implantation energy can be reduced from 600 keV to 390 keV and compared in the low cost of mid-beam ion implanter. The device performances before and after the optimizations all can reach to the standards without obvious differences in parameters. The process method is simple and controllable, which can effectively reduce the cost of equipment for ion implantation and improve the productivity of the silicon avalanche photodiode.

Key words: avalanche photodiode, high-energy implantation, reverse breakdown voltage