中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

导航

电子与封装 ›› 2025, Vol. 25 ›› Issue (2): 020302 . doi: 10.16257/j.cnki.1681-1070.2025.0018

• 电路与系统 • 上一篇    下一篇

S波段内匹配Doherty GaN功率放大器设计

景少红,时晓航,吴唅唅,豆刚,张勇   

  1. 中国电子科技集团公司第五十五研究所,南京 210016
  • 收稿日期:2024-07-23 出版日期:2025-02-27 发布日期:2025-02-27
  • 作者简介:景少红(1988—),男,山东聊城人,硕士,高级工程师,主要研究方向为氮化镓基射频及微波功率放大器电路设计。

Design of Internal Matched Doherty GaN Power Amplifier for S Band

JING Shaohong, SHI Xiaohang, WU Hanhan, DOU Gang, ZHANG Yong   

  1. China ElectronicsTechnology Group Corporation No.55Research Institute, Nanjing 210016, China
  • Received:2024-07-23 Online:2025-02-27 Published:2025-02-27

摘要: 无线通信系统中,功率放大器既是发射端尺寸最大的器件,也是功耗最高的器件。为应对通信系统对功放提出的小体积、高效率的要求,介绍了一款基于GaN工艺的内匹配Doherty功率放大器。该放大器工作频率为3.4~3.6 GHz,饱和输出功率大于47 dBm,附加效率大于55%,输出功率回退4.5 dB时,附加效率大于52%。功率放大器采用内匹配技术设计,可以有效减小体积,整个放大器外封装尺寸为30.8 mm×27.4 mm。

关键词: GaN, Doherty, 内匹配

Abstract: In wireless communication systems, the power amplifier is not only the largest device in the transmitter, but also the device with the highest power consumption. To meet the requirements of small size and high efficiency for power amplifier in communication system, an internal matched Doherty power amplifier based on GaN technology is introduced. The amplifier operates at a frequency of 3.4-3.6 GHz, with a saturated output power up to 47 dBm and a power-added efficiency greater than 55%. When output power is backed off by 4.5 dB, the power-added efficiency is above 52%. The power amplifier is designed with internal matched technology, which can effectively reduce the size, and the package dimension is 30.8 mm×27.4 mm.

Key words: GaN, Doherty, internal matched

中图分类号: