中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2025, Vol. 25 ›› Issue (2): 020305 . doi: 10.16257/j.cnki.1681-1070.2025.0028

• 电路与系统 • 上一篇    下一篇

一种具有可调折返过流保护的LDO电路设计*

王晶1,张瑛1,李玉标1,罗寅2,方玉明1   

  1. 1. 南京邮电大学集成电路科学与工程学院产教融合学院,南京 ?210023;2. 苏州锴威特半导体股份有限公司,江苏 苏州 ?215600
  • 收稿日期:2024-10-09 出版日期:2025-02-27 发布日期:2025-02-27
  • 作者简介:王晶(1998—),男,湖南祁阳人,硕士研究生,主要研究方向为模拟集成电路设计。

Design of an LDO Circuit with Adjustable Foldback Overcurrent Protection

WANG Jing1, ZHANG Ying1, LI Yubiao1, LUO Yin2, FANG Yuming1   

  1. 1. School ofIntegrated Circuit Science and Engineering Industry-Education IntegrationSchool, Nanjing University of Postsand Telecommunications, Nanjing210023, China;2. SuzhouConvert Semiconductor Inc., Suzhou215600, China
  • Received:2024-10-09 Online:2025-02-27 Published:2025-02-27

摘要: 基于CSMC 0.18 μm BCD工艺,设计了一种具有可调折返限流功能且无须内部补偿的低压差线性稳压器(LDO)。为防止闩锁,设计了一个可通过外部单电阻调整折返点的限流结构。此外,为了降低LDO环路补偿的设计难度,设计了一种无须内部补偿的LDO环路。该设计的限流点为13.78 mA,短路电流为0.56 mA,在输入电压为3.4~42 V、输出电压为3 V时,线性调整率不超过0.5 mV/V,且在轻载和重载情况下,相位裕度分别为89.7°和74.7°,1 kHz时电源抑制比为-65 dB。

关键词: 低压差线性稳压器, 过流保护, 折返限流, 闩锁, 无内部补偿

Abstract: Based on the CSMC 0.18 μm BCD process, a low-dropout linear regulator (LDO) with adjustable foldback current limiting and no internal compensation is designed. To prevent latch-up, a current-limiting structure is implemented, which is adjustable via an external single resistor. Additionally, to reduce the design difficulty of LDO loop compensation, an LDO loop that requires no internal compensation is proposed. The current-limiting point of this design is 13.78 mA, with a short-circuit current of 0.56 mA. At an input voltage from 3.4 V to 42 V and an output voltage of 3 V, the linear adjustment rate does not exceed 0.5 mV/V. Under light and heavy load conditions, the phase margins are 89.7° and 74.7°, respectively, and the power supply rejection ratio at 1 kHz is -65 dB.

Key words: low-dropout linear regulator, overcurrent protection, foldback current limiting, latch-up, no internal compensation

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