中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

导航

电子与封装

• 封装、组装与测试 •    下一篇

集成电路SiP封装器件热应力仿真方法研究

吴松1,2,王超1,2,秦智晗1,2,陈桃桃1,2   

  1. 1. 中国电子科技集团公司第四十三研究所,合肥  230088;2. 微系统安徽省重点实验室,合肥  230088
  • 收稿日期:2025-02-14 修回日期:2025-03-31 出版日期:2025-04-11 发布日期:2025-04-11
  • 通讯作者: 吴松
  • 基金资助:
    国防基础科研项目资金(JCKY2023210C014)

Research on Thermal Stress Simulation Method for Integrated Circuit SiP Package Devices

WU Song1,2, WANG Chao1,2, QIN Zhihan1,2, CHEN Taotao1,2   

  1. 1. China Electronics Technology Group Corporation No.43 Research Institute, Hefei 230088, China; 2. Anhui Key Laboratory of Microsystems, Hefei 230088, China
  • Received:2025-02-14 Revised:2025-03-31 Online:2025-04-11 Published:2025-04-11

摘要: 近年来微系统SiP封装技术从微器件的设想到落地,逐步实现了工艺技术上的改进,直至今日渗透到信息、航天、船舶、医学等多个领域,其发展趋势已经势不可挡。但是对于微系统SiP封装器件,热应力导致的热失配是最重要的失效原因之一。想要分析器件的热适配问题,实验成本太高,基于有限元的数值仿真技术不仅可以满足准确度要求,并且节省时间、资源等成本,但是国内外针对微系统SiP封装器件的热应力数值仿真方法并没有进行系统的多方面的对比与验证。基于以上现状,为了实现针对微系统SiP封装器件热应力的高效、全面、准确地仿真,并且形成准确且具有指导性的仿真方法。本研究以某一典型微系统SiP封装模型为例,从收敛性分析、约束类型分析、温度场构建分析、焊接面分析、粘接面分析五个方面研究了该封装器件的热应力仿真方法,最终结合实验进行对比分析,最终形成准确高效的微系统SiP封装器件热应力的仿真方法理论,进而指导该领域器件的封装设计。

关键词: 集成电路, Sip封装, 热应力, 数值模拟, 仿真验证, 电力电子

Abstract: In recent years microsystem SiP packaging technology from the conception of micro devices to the ground, and gradually realize the improvement of process technology, until today penetrate into the information, aerospace, marine, medical and other fields, its development trend has been unstoppable. However, for microsystem SiP packaging devices, thermal mismatch caused by thermal stress is one of the most important failure causes. To analyze the thermal fitness of the device, the experimental cost is too high, and the numerical simulation technology based on finite element can not only meet the accuracy requirements, but also save time, resources and other costs, but the domestic and foreign methods for the numerical simulation of thermal stress for microsystem SiP packages are not systematic and multi-faceted comparisons and validation. Based on the above situation, in order to realize the efficient, comprehensive and accurate simulation of thermal stress for microsystem SiP package devices, and to form an accurate and instructive simulation method. This study takes a typical microsystem SiP packaging model as an example, and investigates the thermal stress simulation method of the packaging device from five aspects, namely, convergence analysis, constraint type analysis, temperature field construction analysis, welding surface analysis, and adhesive surface analysis, and finally conducts a comparative analysis in conjunction with the experiments, which ultimately results in the formation of an accurate and efficient theory of the simulation method of thermal stress of the microsystem SiP packaging device, and then guides the packaging design of the device in this field.

Key words: integrated circuits, SiP packages, thermal stress, numerical modeling, simulation verification, power electronics