载流子存储沟槽栅双极晶体管特性研究与优化设计*

doi:10.16257/j.cnki.1681-1070.2025.0167

电子与封装 ›› 2025, Vol. 25 ›› Issue (12): 120403 . doi: 10.16257/j.cnki.1681-1070.2025.0167

载流子存储沟槽栅双极晶体管特性研究与优化设计^*

李尧^1,2，谌利欢^1,2，苟恒璐^1,2，龙仪^1,2，陈文舒^1,2

1.兰州交通大学电子与信息工程学院，兰州 730070；2. 甘肃省集成电路产业研究院，兰州 730070

收稿日期:2025-03-31 出版日期:2025-12-26 发布日期:2025-12-26
作者简介:李尧（1987—)，男，甘肃武威人，博士，副教授，硕士生导师，主要从事功率半导体器件、有机半导体器件、光电子器件研究。

Characteristic Study and Optimization Design of Carrier Storage Trench Gate Bipolar Transistor

LI Yao^1,2, SHEN Lihuan^1,2, GOU Henglu^1,2, LONG Yi^1,2, CHEN Wenshu^1,2

1. Schoolof Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou730070, China; 2. Gansu Institute of Integrated Circuit Industry, Lanzhou 730070, China

Received:2025-03-31 Online:2025-12-26 Published:2025-12-26

摘要/Abstract

摘要： 为了优化载流子存储沟槽栅双极晶体管（CSTBT）的性能，对CSTBT结构进行了电学特性仿真，通过Sentaurus TCAD软件对比了T-IGBT和CSTBT的击穿特性、输出特性以及关断特性，研究了CSTBT N-drift区掺杂浓度和厚度、P-base区掺杂浓度和CSL掺杂浓度对器件的击穿特性、转移特性以及输出特性的影响。结果表明，相较于T-IGBT，优化前的CSTBT的击穿电压提升了约3.4%，正向导通压降减小了约20.9%，关断损耗几乎一致；对于优化后的CSTBT，当N-drift区厚度为158 µm、N-drift区掺杂浓度为7×10¹³ cm^-3、P-base区掺杂浓度为3×10¹⁷ cm^-3、CSL掺杂浓度为1×10¹⁶ cm^-3时，器件的击穿电压为1 959 V，提升了约22%；V_on为1.14 V，降低了43%。

关键词: IGBT, 击穿特性, 输出特性, 转移特性, 载流子存储层, 关断损耗

Abstract: To optimize the performance of the carrier storage trench gate bipolar transistor (CSTBT), electrical characteristics of the CSTBT structure are simulated. Using Sentaurus TCAD software, the breakdown characteristics, output characteristics, and turn-off characteristics of T-IGBT and CSTBT are compared. The effects of N-drift region doping concentration and thickness, P-base region doping concentration, and CSL doping concentration on the breakdown characteristics, transfer characteristics, and output characteristics of the CSTBT are investigated. The results show that compared to the T-IGBT, the pre-optimized CSTBT exhibits about 3.4% increase in breakdown voltage, about 20.9% reduction in forward conduction voltage drop, and nearly identical turn-off losses. For the optimized CSTBT, with an N-drift region thickness of 158 µm, a N-drift region doping concentration of 7×10¹³cm^-3, a P-base region doping concentration of 3×10¹⁷ cm^-3, and a CSL doping concentration of 1×10¹⁶ cm^-3, the device achieves a breakdown voltage of 1 959 V (about 22% improvement), V_on is 1.14 V (43% reduction).

Key words: IGBT, breakdown characteristic, output characteristic, transfer characteristic, carrier storage layer, turn-off loss

中图分类号:

TN386.2

李尧，谌利欢，苟恒璐，龙仪，陈文舒. 载流子存储沟槽栅双极晶体管特性研究与优化设计^*[J]. 电子与封装, 2025, 25(12): 120403 .

LI Yao, SHEN Lihuan, GOU Henglu, LONG Yi, CHEN Wenshu. Characteristic Study and Optimization Design of Carrier Storage Trench Gate Bipolar Transistor[J]. Electronics & Packaging, 2025, 25(12): 120403 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

载流子存储沟槽栅双极晶体管特性研究与优化设计^*

Characteristic Study and Optimization Design of Carrier Storage Trench Gate Bipolar Transistor

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