射频芯片封装中的近场耦合分析*
电子与封装
• 封装、组装与测试 • 下一篇
沈时俊,孙涵子,左标
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SHEN Shijun, SUN Hanzi, ZUO Biao
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摘要: 在射频芯片高可靠陶瓷封装中,键合金丝、通孔、微凸点等互联结构所产生的寄生电容和电感,会产生射频信号的近场耦合现象,直接影响到射频信号传输的完整性。将微波网络级联理论与场路分析方法相结合,采用三维电磁仿真软件HFSS,基于陶瓷基板和混合集成工艺,对射频芯片封装互联结构进行建模和信号传输链路的信号完整性仿真,可用于指导封装工艺参数的设计和优化,形成高效、标准化的射频芯片封装解决方案,对提高射频芯片封装后电性能指标的提升具有十分重要的意义。
关键词: 射频芯片, 互联结构, 近场耦合, 信号完整性
Abstract: In high-reliability ceramic packaging technology for radio frequency (RF) chips, the parasitic capacitance and inductance generated by interconnect structures, such as bonding wires, vias and microbumps, can cause near-field coupling of RF signals. This directly compromises the integrity of the signals during transmission. Integrating microwave network cascading theory with field-path analysis methodologies and employing three-dimensional electromagnetic simulation software (HFSS) enables modelling of RF chip packaging interconnect structures and simulation of signal integrity of transmission links based on ceramic substrates and hybrid integration processes. This approach can inform the design and optimisation of packaging process parameters, providing an efficient, standardised RF chip packaging solution. It is also significant for improving the electrical performance metrics of RF chips after packaging.
Key words: radio frequency(RF), chips, interconnect structures, near-field coupling, signal integrity
沈时俊, 孙涵子, 左标.
射频芯片封装中的近场耦合分析* [J]. 电子与封装, doi: 10.16257/j.cnki.1681-1070.2026.0072.
SHEN Shijun, SUN Hanzi, ZUO Biao. Analysis of Near-Field Coupling in Radio Frequency Chip Packaging[J]. Electronics & Packaging, doi: 10.16257/j.cnki.1681-1070.2026.0072.
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链接本文: https://ep.org.cn/CN/10.16257/j.cnki.1681-1070.2026.0072