关键词: 第三代半导体, 功率电子封装, 低温烧结, 抗氧化, 碳基复合材料

Abstract: Third-generation wide-bandgap semiconductor devices impose dual stringent requirements on packaging interconnect materials: low-temperature interconnection and high-temperature serviceability. Traditional tin-based solders struggle to withstand high-temperature conditions, while nanosilver is limited by high costs and electromigration issues. Nano-copper, which combines electrical and thermal conductivity properties similar to those of silver with low cost and excellent resistance to electromigration, is an ideal alternative material. However, it is highly prone to oxidation, which can significantly degrade the performance of sintered joints. This paper reviews the technological evolution of interconnect materials for power semiconductor packaging, from silver paste to copper paste, and outlines four types of anti-oxidation strategies for nano-copper: surface coating, self-reduction, atmosphere-assisted, and bimodal particle size distribution; It analyzes the synergistic effects of copper with carbon materials such as carbon nanotubes and graphene, revealing their mechanisms of action in enhancing thermal and electrical conductivity and mitigating thermal expansion mismatch; it summarizes the impact of sintering process parameters on microstructure and reliability, and identifies pressureless sintering, multi-material interface matching, and green manufacturing as the core challenges requiring urgent breakthroughs in nano-copper sintering technology.

Key words: third-generation semiconductor, power electronic packaging, low-temperature sintering, anti-oxidation, carbon-based composite material