关键词: 第三代半导体, 功率器件, 封装结构, 可靠性评估

Abstract: Third-generation semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), show potential in power electronics due to their excellent properties. To fulfill their full potential, advanced packaging technologies are essential to tackle challenges in electrical interconnections, mechanical support, and thermal management. This work focuses on three key areas, including minimizing parasitic electrical parameters, reducing thermal resistance, and enhancing integration levels. The recent innovations of packaging structures and their benefits are comprehensively discussed. On this basis, the reliability concerns associated with these new structures and the current standards as well as reliability testing methods are summarized. The existing problems and areas for improvement are finally discussed. Lastly, the future developing trend of packaging technologies for third-generation semiconductors is prospected.

Key words: third-generation semiconductor, power devices, packaging structure,  reliability evaluation