中国电子学会电子制造与封装技术分会会刊

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电子与封装

• 封装、组装与测试 •    下一篇

Sn3.0Ag0.5Cu BGA焊点电迁移微观组织演变与失效模式

孟帅1,刘厚麟1,黄斐斐2,黄明亮1   

  1. 1. 大连理工大学材料科学与工程学院电子封装材料与技术实验室,辽宁 大连  116024;2. 大连理工大学化学与工程学院,辽宁 大连  116024
  • 收稿日期:2026-05-08 修回日期:2026-06-26 出版日期:2026-06-30 发布日期:2026-06-30
  • 通讯作者: 黄明亮
  • 基金资助:
    晶圆级Sn-Ag微凸点电沉积机理与芯片互连可靠性;航天电子产品微互联焊点在尺度效应及多应力耦合作用下失效机理

Microstructure Evolution and Failure Mode of Sn3.0Ag0.5Cu BGA Solder Joints Under Electromigration

MENG Shuai1, LIU Houlin1, HUANG Feifei2, HUANG Mingliang1   

  1. 1. Electronic Packaging Materials Laboratory, School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China; 2. School of Chemical Engineering, Dalian University of Technology, Dalian 116024, China

  • Received:2026-05-08 Revised:2026-06-26 Online:2026-06-30 Published:2026-06-30

摘要: 通过实时监测SAC305球栅阵列(BGA)焊点电迁移(EM)过程中的电阻变化,并关联焊点的微观组织演变,揭示SAC305 BGA焊点阴极凸点下金属化层(UBM)溶解和阴极界面产生空洞、裂纹等缺陷导致电阻升高的EM失效模式。对于θ角(β-Sn晶粒的c轴与电子流动方向之间的夹角)较大为67°的No.1焊点,EM过程中Sn原子的自扩散导致焊点阴极界面产生空洞,逐渐萌生裂纹并扩展,焊点的电阻持续缓慢增长,通电1 500 h后电阻变化率仅为8.72%;对于θ角较小为23°的No.2焊点,EM过程中Cu原子的定向迁移导致焊点阴极Cu UBM发生大量溶解,焊点电阻变化率相对较高,EM初期电阻增加相对缓慢并在达到约15%范围后急剧升高至100%而快速失效。

关键词: SAC305 BGA 焊点, 电迁移, 电阻变化, 微观组织, 失效模式

Abstract: By real-time monitoring of the resistance change of SAC305 ball grid array (BGA) solder joints during electromigration (EM), and correlating it with the microstructural evolution of the solder joints, the EM failure modes of SAC305 BGA solder joints were revealed. For the No.1 solder joint, where the θ angle (the angle between the c-axis of the β-Sn grain and the electron flow direction) was as high as 67°, the self-diffusion of Sn atoms during EM led to void formation at the cathode interface of the joint. These voids gradually induced crack initiation and propagation, resulting in a slow but continuous increase in resistance. After 1 500 h of current stressing, the rate of change of resistance was only 8.72%; For the No.2 solder joint, which had a small θ angle of 23°, the directional migration of Cu atoms during EM caused extensive dissolution of the Cu under-bump metallization (UBM) at the cathode. The overall rate of change of resistance was relatively high; however, the resistance increased slowly during the early EM stage. Once the resistance increase reached approximately 15%, it rose sharply to 100%, leading to rapid failure.

Key words: SAC305 BGA solder joint, electromigration, resistance change, microstructure, failure mode