中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2016, Vol. 16 ›› Issue (9): 18 -23. doi: 10.16257/j.cnki.1681-1070.2016.0104

• 电路设计 • 上一篇    下一篇

基于反馈控制的高阶温度补偿带隙基准电路

王宇星1,吴 金2   

  1. 1.无锡科技职业学院,江苏无锡 214028;2.东南大学无锡分校,江苏无锡 214135
  • 收稿日期:2016-05-19 出版日期:2016-09-20 发布日期:2016-09-20
  • 作者简介:王宇星(1980—),女,江苏无锡人,东南大学硕士,讲师,研究方向为数模混合IC设计。

A High Order Temperature Compensation Bandgap Voltage Reference Based on the Feedback Controlling

WANG Yuxing1,WU Jinsup>2   

  1. 1.Wuxi College of science and technology,Wuxi 214028,China;2.Southeast University WuXi Campus,Wuxi 214135,China
  • Received:2016-05-19 Online:2016-09-20 Published:2016-09-20

摘要: 提出了一种温度系数可配置的高阶非线性带隙基准补偿技术。利用偏置支路实现闭环负反馈,在提高PSRR的同时,控制电路内部管子的直流工作点对基准电路进行非线性高阶温度补偿。通过优化电路参数设计,进一步改善了温度系数并且提高了整个电路的工艺稳定性。基于CSMC 0.5 μm CMOS工艺的仿真结果表明,在-55~125℃温度范围内两种模式基准电压温度系数为1.24×10-6/℃和2.841×10-6/℃,并具有非常好的工艺稳定性。在低频范围内平均电源抑制比达到46.3dB和70.6dB以上。

关键词: 带隙基准, 温度系数, 电源抑制比, 工艺稳定性

Abstract: A new nonlinear temperature-compensation method which can reduce the temperature coefficient effectively by controlling the DC operating points of the critical nodes in circuits has been proposed in this paper.Based on this method,the tempreture-coefficient of the BGR circuit can be configured.Using negative feedback loop improve the PSRR and optimization method of the parameters further to improve the temperature coefficient and reduce the process sensibility of the whole voltage reference circuits.Simulated in CSMC0.5μm HVCMOSprocess,ithasa temperature coefficientinthe-55℃to 125℃range of 1.24×10-6/℃and 2.841×10-6/℃ at TT corner,also the temperature coefficient has smaller changes variers from other different corners.At low frequncy range its average PSRR value is higer than 46.3 dB and 70.6 dB.

Key words: bandgap reference, temperature coefficient, PSRR, process stability

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