关键词: MTM反熔丝单元, 过电应力, 电迁移失效

Abstract: Anti-fuse Integrated circuit is the key device widely used in the aerospace filed, when failure occurs, we must study whether the failure mechanism is related to the antifuse unit. In this paper, we have studied failure mechanism of an over-voltage stress failure FPGA circuit, and located the failure site by circuit logic, EMMI and infrared method. Then, through FIB and SEM method we find out serious electro-migration phenomenon in NMOS transistor drain junction and wiring metal region caused by the over-stress of power supply. To prevent this failure, we replaced the failure power filter capacitance and optimized layout for electro-migration. These measures were verified to be effective.

Key words: MTManti-fuse, over-voltagestress, electro-migrationfailure