关键词: FinFET, SRAM型FPGA, 单粒子效应, 多位翻转, 抗辐照测试

Abstract: The UltraScale+ architecture FPGA of 16 nm FinFET process has low power consumption and high performance, but there are risks such as the decrease of single event upset threshold and the increase of multi bit upset. Based on the linear energy transfer (LET) equivalent mechanism, eight heavy ions, namely ⁷Li³⁺, ¹⁹F⁹, ³⁵Cl^11,14+, ⁴⁸Ti^10,15+, ⁷⁴Ge^11,20+, ¹²⁷I^15,25+, ¹⁸¹Ta, ²⁰⁹Bi, are selected for direct ionization single event experiment. The measurement methods of single event latch (SEL), upset threshold, upset section and multi bit upset are established. Combined with the LET flux and the injection angle under the FinFET structure, the recognition algorithm for identifying single bit upset and multi bit upset is built, which can process and realize the visual monitoring of event upset status and multi bit upset data in real time. The single event effect analysis method involved can comprehensively evaluate the irradiation resistance properties of the circuit.

Key words: FinFET, SRAM FPGA, single event effect, multi bit upset, irradiation resistance test