采用交叉耦合误差放大器的低压高增益LDO设计*

doi:10.16257/j.cnki.1681-1070.2025.0007

电子与封装 ›› 2025, Vol. 25 ›› Issue (1): 010305 . doi: 10.16257/j.cnki.1681-1070.2025.0007

采用交叉耦合误差放大器的低压高增益LDO设计^*

张锦辉¹，朱春茂¹，张霖^1,2

1. 福建理工大学电子电气与物理学院，福州 ?350100；2. 福建理工大学电子信息与电气技术国家级实验教学示范中心，福州 ?350100

收稿日期:2024-09-14 出版日期:2025-01-22 发布日期:2025-01-22
作者简介:张锦辉（2000—），男，山西吕梁人，硕士研究生，主要研究方向为模拟集成电路设计、高频率电源设计；

Low-Voltage High-Gain LDO Design Using Cross-Coupled Error Amplifier

ZHANG Jinhui¹, ZHU Chunmao¹, ZHANG Lin^1,2

1. School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350100, China; 2. NationalDemonstration Center for Experimental Electronic Information and ElectricalTechnology Education, Fujian Universityof Technology, Fuzhou 350100, China

Received:2024-09-14 Online:2025-01-22 Published:2025-01-22

摘要/Abstract

摘要： 设计了一种低输入电压、高增益的LDO，其误差放大器采用交叉耦合结构来增大环路增益，并通过密勒电容和调零电阻的串联引入1个左半平面的零点，确保该电路的频率响应环路稳定性。采用0.35 μm标准CMOS工艺进行仿真，输入电压为1.5 V、负载最大电流为100 mA。仿真结果表明，构建的LDO可以将输出电压稳定在1.2 V，环路的低频增益在轻载的情况下高达122 dB，芯片面积为0.196 mm²，且相位裕度在重载情况下亦能做到大于58°，静态电流为21.2 μA。由于交叉耦合误差放大器的使用，电路的精度得到很大提高，负载调整率可以达到0.007%，所设计的LDO有较高的应用价值。

关键词: 低压, 交叉耦合, LDO, 跨导运算放大器

Abstract: An LDO with a low input voltage and a high gain is designed. The error amplifier adopts a cross-coupled structure to increase the loop gain, and a left half-plane zero is introduced by the series connection of a Miller capacitor and a nulling resistor to ensure the frequency response loop stability of the circuit. The 0.35 μm standard CMOS process is used for simulation with an input voltage of 1.5 V and a maximum load current of 100 mA. Simulation results show that the constructed LDO can stabilize the output voltage at 1.2 V, and the low-frequency gain of the loop is as high as 122 dB under the light load, with a chip area of 0.196 mm². The phase margin under the heavy load can also be greater than 58°, with a quiescent current of 21.2 μA. Due to the employment of the cross-coupled error amplifier, the circuit's accuracy is greatly improved, and the load regulation can reach 0.007%. The designed LDO is of great value in regard of application.

Key words: low-voltage, cross-coupled, LDO, operational transconductance amplifier

中图分类号:

TN432

张锦辉，朱春茂，张霖. 采用交叉耦合误差放大器的低压高增益LDO设计^*[J]. 电子与封装, 2025, 25(1): 010305 .

ZHANG Jinhui, ZHU Chunmao, ZHANG Lin. Low-Voltage High-Gain LDO Design Using Cross-Coupled Error Amplifier[J]. Electronics & Packaging, 2025, 25(1): 010305 .

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采用交叉耦合误差放大器的低压高增益LDO设计^*

Low-Voltage High-Gain LDO Design Using Cross-Coupled Error Amplifier

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