中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2025, Vol. 25 ›› Issue (5): 050105 . doi: 10.16257/j.cnki.1681-1070.2025.0086

• “面向先进封装应用的铜互连键合技术”专题 • 上一篇    下一篇

铜-铜键合制备多层陶瓷基板技术研究*

雷振宇1,陈浩1,翟禹光2,王莎鸥2,陈明祥1   

  1. 1. 华中科技大学机械科学与工程学院,武汉  430074;2. 北京无线电测量研究所,北京  100854
  • 收稿日期:2025-01-02 出版日期:2025-06-04 发布日期:2025-02-21
  • 作者简介:雷振宇(1993—),男,湖北武汉人,博士,主要研究方向为电子封装可靠性、多层陶瓷基板制备技术。

Technical Study on Preparation of Multilayer Ceramic Substrates by Cu-Cu Bonding

LEI Zhenyu1, CHEN Hao1, ZHAI Yuguang2, WANG Shaou2, CHEN Mingxiang1   

  1. 1. Schoolof Mechanical Science &Engineering, Huazhong University ofScience and Technology, Wuhan 430074, China;2. Beijing Institute of Radio Measurement, Beijing 100854, China
  • Received:2025-01-02 Online:2025-06-04 Published:2025-02-21

摘要: 为了提高功率器件封装集成度,通过铜-铜热压键合的方式将直接镀铜(DPC)陶瓷基板进行垂直堆叠制备出一种新型多层陶瓷基板。利用电镀工艺对铜表面进行了处理,并探究了铜-铜热压键合的工艺条件。结果表明,在电流密度为2 A/dm2(ASD)时,可制备出高晶面(111)取向的金属铜,其具有较低的表面粗糙度,有利于铜-铜热压键合。在250 ℃和24 MPa压力下,采用高晶面(111)电镀铜实现高强度键合(强度高达32.34 MPa),制备出含腔体结构的多层陶瓷基板,并具有较高可靠性。

关键词: 铜-铜键合, 多层陶瓷基板, 直接镀铜陶瓷基板, 可靠性

Abstract: To improve the integration of power device packaging, a new type of multilayer ceramic substrate is prepared by vertically stacking direct copper plated (DPC) ceramic substrates through Cu-Cu hot pressing bonding. The copper surface is treated using electroplating technology, and the process conditions for copper copper hot pressing bonding are explored. The results indicate that at a current density of 2 A/dm2 (ASD), high crystal face (111) oriented metallic copper can be prepared with low surface roughness, which is beneficial for Cu-Cu hot press bonding. At 250 ℃ and a pressure of 24 MPa, high-strength bonding (strength up to 32.34 MPa) is achieved by electroplating copper with a high crystal surface (111), and a multilayer ceramic substrate containing a cavity structure is prepared with high reliability.

Key words: Cu-Cu bonding, multilayer ceramic substrate, direct plated copper ceramic substrate, reliability

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