三维集成铜-铜低温键合技术的研究进展

doi:10.16257/j.cnki.1681-1070.2025.0110

摘要/Abstract

摘要： 随着集成电路制造技术对高性能、高集成度和低功耗的需求不断增加，三维集成电路（3D IC）技术成为提升芯片性能和集成度的有效途径。金属Cu具有低电阻率、优异的导热性和抗电迁移能力，能够提供高效的电气连接和热管理性能。低温Cu-Cu键合技术因其在高密度互连、良好的导电性和导热性方面的优势，成为先进封装的核心技术之一。探讨了Cu-Cu键合技术面临的主要挑战及其解决方案，总结了目前主要的几种低温键合技术，分析了它们在实际应用中的优势与不足。尽管Cu-Cu低温键合技术面临诸多技术瓶颈，但随着材料和工艺的不断进步，其在未来电子封装技术中仍具有广阔的应用前景。

关键词: 三维集成, Cu-Cu键合, 低温键合, 表面处理, 先进封装

Abstract: The increasing demand for high performance, high integration, and low power consumption in integrated circuit manufacturing has led to the adoption of three-dimensional integrated circuit (3D IC) technology as an effective solution for enhancing chip performance and integration. Copper, due to its low resistivity, excellent thermal conductivity, and resistance to electromigration, provides efficient electrical connections and effective thermal management. Low-temperature Cu-Cu bonding technology has become one of the core technologies in advanced packaging, owing to its advantages in high-density interconnections, excellent electrical conductivity and thermal performance. Challenges associated with Cu-Cu bonding technology and their corresponding solutions are discussed, several major low-temperature bonding techniques are summarized, and their advantages and limitations in practical applications are analyzed. Although Cu-Cu low-temperature bonding technology faces many technical bottlenecks, with the continuous advancement in materials and processes, it still has significant promise for future applications in electronic packaging.

Key words: three-dimensional integration, Cu-Cu bonding, low temperature bonding, surface treatment, advanced packaging

中图分类号:

陈桂, 邵云皓, 屈新萍. 三维集成铜-铜低温键合技术的研究进展[J]. 电子与封装, 2025, 25(5): 050106 .

CHEN Gui, SHAO Yunhao, QU Xinping. Research Progress of Three-Dimensional Integrated Copper-Copper Low-Temperature Bonding Technology[J]. Electronics & Packaging, 2025, 25(5): 050106 .

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