氮化镓(多晶硅)异质结势垒肖特基二极管的载流子传输机制研究

doi:10.16257/j.cnki.1681-1070.2025.0105

摘要/Abstract

摘要： P型多晶硅(Poly-Si)与GaN形成的异质结势垒肖特基二极管能够改善传统宽禁带半导体功率二极管正向导通与反向阻断特性难以兼顾的问题。为研究器件在不同工作状态下的物理机制，通过实验与机理分析，探究了该器件在-80~+80 ℃的正反向特性与载流子输运机制。研究结果表明，其载流子输运机制与GaN/Poly-Si界面缺陷状态有关。正向偏压低于0.5 V时，高温区（-20~80 ℃）以多隧道捕获-发射为主导，低温区（-80~-40 ℃）则以热电子发射为主；在0.5~0.9 V时F-N隧穿为主要机制。反向偏压下，低于50 V时势垒降低效应占主导，高于50 V时则以陷阱辅助的空间电荷受限机制为主。

关键词: 异质结势垒肖特基二极管, 氮化镓, 多晶硅, 陷阱辅助

Abstract: The heterojunction barrier Schottky diode formed by P-type polycrystalline silicon (Poly-Si) and GaN can improve the problem of balancing the forward conduction and reverse blocking characteristics of traditional wide bandgap semiconductor power diodes. To investigate the physical mechanism of the device under different working states, the forward and reverse characteristics and carrier transport mechanism of the device at -80-+80 ℃ are explored through experiments and mechanism analysis. The research results indicate that the carrier transport mechanism is related to the defect state at the GaN/Poly Si interface. When the forward bias voltage is below 0.5 V, the high-temperature region (-20-80 ℃) is dominated by multi tunnel capture emission, while the low-temperature region (-80--40 ℃) is dominated by hot electron emission. F-N tunneling is the main mechanism at 0.5-0.9 V. Under reverse bias, the barrier lowering effect dominates below 50 V, while the trap assisted space charge confinement mechanism dominates above 50 V.

Key words: heterojunction barrier Schottky diode, GaN, poly-Si, trap-assisted

中图分类号:

TN315⁺.2

薛文文，丁继洪，张彦文，黄伟，张卫. 氮化镓(多晶硅)异质结势垒肖特基二极管的载流子传输机制研究[J]. 电子与封装, 2025, 25(9): 090404 .

XUE Wenwen, DING Jihong, ZHANG Yanwen, HUANG Wei, ZHANG Wei. Study on Carrier Transport Mechanism of GaN (Poly-Si) Heterojunction Barrier Schottky Diodes[J]. Electronics & Packaging, 2025, 25(9): 090404 .

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中国半导体行业协会封装分会会刊

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