重复短路应力下p-GaN HEMT器件的阈值电压退化机制*

doi:10.16257/j.cnki.1681-1070.2022.0610

电子与封装 ›› 2022, Vol. 22 ›› Issue (6): 060401 . doi: 10.16257/j.cnki.1681-1070.2022.0610

重复短路应力下p-GaN HEMT器件的阈值电压退化机制^*

伍振;周琦;潘超武;杨宁;张波

电子科技大学电子薄膜与集成器件国家重点实验室，成都 610054

收稿日期:2021-12-24 出版日期:2022-06-23 发布日期:2022-01-25
作者简介:伍振（1996—），男，重庆人，硕士研究生，主要研究方向为GaN功率器件可靠性。

ThresholdVoltage Degradation Mechanism of p-GaN HEMT Devices Under Repetitive ShortCircuit Stress

WU Zhen, ZHOU Qi, PAN Chaowu, YANG Ning, ZHANG Bo

State Key Laboratoryof Electronic Thin Films and Integrated Devices, University of ElectronicScience and Technology of China, Chengdu 610054, China

Received:2021-12-24 Online:2022-06-23 Published:2022-01-25

摘要/Abstract

摘要： p-GaN HEMT凭借高频、高功率密度的优势，已逐渐应用于高频电源领域，由于负载短路、错误的栅控信号等因素，均会导致器件处于严重的短路状态。目前，研究重点多聚焦于600/650 V商用器件的最终失效上，缺乏对器件在短路应力下的退化机理研究。通过重复短路应力研究了100 V商用p-GaN HEMT的短路鲁棒性，随着应力次数的增加，器件的阈值电压V_TH表现出持续正向漂移且漂移量可达+0.65 V，漏极电流I_D持续下降。此外，还研究了短路应力后器件的动态恢复过程。在较弱的短路应力后，由于AlGaN势垒层内的陷阱和p-GaN/AlGaN界面陷阱释放掉被捕获的电子，V_TH和I_D能够完全恢复；而在苛刻的短路应力后，栅下产生的热电子将轰击p-GaN/AlGaN界面从而诱导出新的界面缺陷，这将导致V_TH永久性的正向漂移，最终使得I_D不可恢复。

关键词: 100Vp-GaNHEMT, 短路, 阈值电压, 陷阱, 热电子

Abstract: With the advantages of high frequency and high power density, p-GaN HEMT has been gradually applied to the field of high frequency power supply. Due to load short circuit, faulty gate control signals and other factors, the device will be in a serious short circuit state. At present, most of the research focuses on the final failure of 600/650 V commercial devices, and there is a lack of research on the degradation mechanism of devices under short circuit stress. In this paper, the short circuit robustness of 100 V commercial p-GaN HEMT is studied by repetitive short circuit stress. With the increase of stress times, the threshold voltage V_TH of the device continues to drift to the right, and the drift can reach + 0.65 V, and the drain current I_D continues to decline. In addition, the dynamic recovery process of the device after short circuit stress is also studied. After weak short circuit stress, V_TH and I_D can be completely recovered because the trapped electrons are released by the traps in the AlGaN barrier layer and the p-GaN/AlGaN interface traps. After stringent short circuit stress, the hot electrons generated under the gate will bombard the p-GaN/AlGaN interface and induce new interface defects, which will lead to the permanent forward drift of V_TH and finally make the I_D unrecoverable.

Key words: 100Vp-GaNHEMT, shortcircuit, thresholdvoltage, trap, hotelectron

中图分类号:

TN306

伍振;周琦;潘超武;杨宁;张波. 重复短路应力下p-GaN HEMT器件的阈值电压退化机制^*[J]. 电子与封装, 2022, 22(6): 060401 .

WU Zhen, ZHOU Qi, PAN Chaowu, YANG Ning, ZHANG Bo. ThresholdVoltage Degradation Mechanism of p-GaN HEMT Devices Under Repetitive ShortCircuit Stress[J]. Electronics & Packaging, 2022, 22(6): 060401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

重复短路应力下p-GaN HEMT器件的阈值电压退化机制^*

ThresholdVoltage Degradation Mechanism of p-GaN HEMT Devices Under Repetitive ShortCircuit Stress

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