全耗尽绝缘层上硅技术及生态环境简介

doi:10.16257/j.cnki.1681-1070.2022.0602

摘要/Abstract

摘要： 随着半导体技术节点微缩到3 nm及以下，晶体管的尺寸难以进一步缩小，导致了成本优势的减小。功能性和功耗成为物联网、可穿戴设备、汽车电子等应用的主要关注点，为满足这一需求，全耗尽绝缘层上硅（Fully Depleted Silicon on Insulator, FDSOI）技术被进一步研发和产品化。对FDSOI技术的特点和生态环境进行了总结。FDSOI利用体偏置平衡功耗与性能，采用应力优化提高迁移率，通过减薄硅膜厚度抑制短沟道效应并减小寄生电容，因此被应用到低功耗处理器、低噪声放大器、嵌入式存储器等低功耗产品。FDSOI具有巨大的市场潜力，将成为半导体技术未来重要的发展趋势。

关键词: 全耗尽绝缘层上硅, 超薄埋氧, 体偏置, 低功耗

Abstract: With the technology node scales down to 3 nm and below, the transistor sizes can be hardly shrunk, resulting in the narrowing of cost advantage. Main attention has been drawn to the functionality and power for applications such as Internet of Things, wearable electronics, and automotive applications. To meet these requirements, fully depleted silicon-on-insulator (FDSOI) has been further investigated and commercialized. The FDSOI technology and its ecosystem are reviewed. FDSOI uses body bias to implant trade-off of power and performance, adopts stress optimization to enhance mobility, thins the thickness of silicon to suppress short channel effect and reduce the parasitic capacitance, thus it is applied to low power application such as low power processor, low noise amplifier and embedded memory. FDSOI has great market potential and will become important trends.

Key words: fullydepletedsilicononinsulator, ultrathinburiedoxide, bodybias, lowpower

中图分类号:

TN432

赵晓松;顾祥;张庆东;吴建伟;洪根深. 全耗尽绝缘层上硅技术及生态环境简介[J]. 电子与封装, 2022, 22(6): 060501 .

ZHAO Xiaosong, GU Xiang, ZHANG Qingdong, WU Jianwei, HONG Genshen. Introduction to FullyDepleted Silicon on Insulator Technology and Its Ecosystem[J]. Electronics & Packaging, 2022, 22(6): 060501 .

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