轨道交通碳化硅器件研究进展

doi:10.16257/j.cnki.1681-1070.2022.0606

摘要/Abstract

摘要： 随着轨道交通硅基功率器件性能逐渐逼近理论极限，碳化硅功率器件成为重点研究方向，以满足轨道交通系统对高功率密度、低损耗和高可靠性等要求。综述了轨道交通领域碳化硅MOSFET和SBD的芯片、混合碳化硅模块和全碳化硅模块的发展概况，并展望了碳化硅芯片和模块的技术发展趋势。介绍了碳化硅MOSFET芯片向沟槽栅、集成SBD和提升可靠性和迁移率等方向发展的趋势。全碳化硅器件、低杂散电感结构、低热阻基板和高可靠性烧结层的研究对碳化硅模块的发展至关重要。

关键词: 轨道交通, 碳化硅, MOSFET, 全碳化硅模块

Abstract: For the silicon based power devices in railway traction system are approaching their theoritical limit, the silicon carbide (SiC) power devices are expected to meet the needs for higher power density, lower loss and higher reliability of traction system. The recent advances in SiC MOSFETs, SiC SBD, hybrid SiC module and full-SiC module for railway traction is summarized. The development trends of SiC devices and modules for the future are also prospected. There some critical issues needed to be solved for SiC MOSFETs in terms of trench gate, integrated SBD, and fabrication processes of enhancing device reliability and electron mobility. And the studies of full-SiC devices, low stray inductance structure, low heat resistance base-plate and high relibility sintered layer are essential for SiC modules.

Key words: railwaytraction, SiC, MOSFET, full-SiCpowermodules

中图分类号:

TN304

李诚瞻, 周才能, 秦光远, 宋瓘, 陈喜明. 轨道交通碳化硅器件研究进展[J]. 电子与封装, 2022, 22(6): 060102 .

LI Chenzhan, ZHOU Caineng, QIN Guangyuan, SONG Guan, CHEN Ximing. Recent Advances in SiC Power Devices for RailwayTraction[J]. Electronics & Packaging, 2022, 22(6): 060102 .

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