SiC功率器件辐照效应研究进展

doi:10.16257/j.cnki.1681-1070.2022.0605

摘要/Abstract

摘要： SiC功率器件是许多航天器用电子设备的重要组成部分，是保障深空探测任务顺利进行的前提和基础。在梳理SiC功率器件发展概况的同时，针对不同SiC功率器件（SiC SBD、SiC JBS、SiC MOSFET）在空间辐射环境下的性能退化规律进行了概述，重点分析了辐射环境下SiC功率器件的损伤机理，为SiC功率器件抗辐射性能工艺的长远发展提供了参考。

关键词: SiC功率器件, 肖特基势垒二极管, 结势垒肖特基二极管, MOSFET, 空间辐射效应, 损伤机理

Abstract: SiC power device is an important part of many spacecraft electronic equipment. It is the premise and foundation to ensure the smooth progress of deep space exploration mission. While combing the development of SiC power devices, this paper summarizes the performance degradation law of different SiC power devices (SiC SBD, SiC JBS, SiC MOSFET) in space radiation environment, and focuses on the damage mechanism of SiC Power Devices in radiation environment, which provides a reference for the long-term development of radiation resistance technology of SiC power devices.

Key words: SiCpowerdevice, schottkybarrierdiode, junctionbarrierschottkydiode, MOSFET, spaceradiationeffect, damagemechanism

中图分类号:

TN454

刘超铭;王雅宁;魏轶聃;王天琦;齐春华;张延清;马国亮;刘国柱;魏敬和;霍明学. SiC功率器件辐照效应研究进展[J]. 电子与封装, 2022, 22(6): 060101 .

LIU Chaoming, WANG Yaning, WEI Yidan, WANG Tianqi, QI Chunhua, ZHANG Yanqing, MA Guoliang, LIU Guozhu, WEI Jinghe, HUO Mingxue. Progress in the Study of Irradiation Effects of SiC Power Devices[J]. Electronics & Packaging, 2022, 22(6): 060101 .

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