应用于STT-MRAM存储器的高可靠灵敏放大器设计

doi:10.16257/j.cnki.1681-1070.2023.0031

电子与封装 ›› 2023, Vol. 23 ›› Issue (4): 040306 . doi: 10.16257/j.cnki.1681-1070.2023.0031

应用于STT-MRAM存储器的高可靠灵敏放大器设计

李嘉威;吴楚彬;王超;孙杰杰;杨霄垒;赵桂林

中国电子科技集团公司第五十八研究所，江苏无锡 214035

收稿日期:2022-09-27 出版日期:2023-04-27 发布日期:2023-04-27
作者简介:李嘉威（1997—），男，河北石家庄人，硕士，从事STT-MRAM存储器相关电路设计工作。

Design of High-Reliability Sensing Amplifier Applied to STT-MRAM Memory

LI Jiawei,WU Chubin,WANG Chao,SUN Jiejie,YANG Xiaolei,ZHAO Guilin

China Electronics Technology Group CorporationNo.58 Research Institute, Wuxi 214035, China

Received:2022-09-27 Online:2023-04-27 Published:2023-04-27

摘要/Abstract

摘要： 自旋转移矩磁性随机存储器（STT-MRAM）以其非易失、速度快、数据保持时间长等优势被认为是最有潜力的新型存储技术之一。然而，由于磁性隧道结（MTJ）的温度相关性，其隧穿磁阻率（TMR）在高温下会变低，对高可靠灵敏放大器的设计提出了更高的要求。基于2T-2MTJ存储单元，设计了一款可以工作在宽温度范围内的高灵敏度放大器。在?40~125℃的温度范围内，该灵敏放大器在TMR为50%时仍具有较高的灵敏度，保证了STT-MRAM的读可靠性。

关键词: 自旋转移矩磁性随机存储器, 2T-2MTJ, 高可靠性, 灵敏放大器

Abstract: Spin transfer torque magnetoresistive random access memory (STT-MRAM) is considered as one of the mostpromising new memory technologies due to its non-volatility, high speedand long data retention time. However, due to the correlation of temperature ofmagnetic tunnel junction(MTJ), its tunneling magneto-resistance(TMR) becomes lower at a higher temperature, which puts forward higher requirements for the design of highly reliable sensing amplifier. Based on 2T-2MTJ cell structure, a high sensing amplifier which can work in a wide temperature range is designed. In the temperature range of ?40-125℃, the sensing amplifier can still have a highsensing margin when the TMR is 50%, which ensures the read reliability of STT-MRAM.

Key words: STT-MRAM, 2T-2MTJ, high reliability, sensing amplifier

中图分类号:

TN492

李嘉威;吴楚彬;王超;孙杰杰;杨霄垒;赵桂林. 应用于STT-MRAM存储器的高可靠灵敏放大器设计[J]. 电子与封装, 2023, 23(4): 040306 .

LI Jiawei,WU Chubin,WANG Chao,SUN Jiejie,YANG Xiaolei,ZHAO Guilin. Design of High-Reliability Sensing Amplifier Applied to STT-MRAM Memory[J]. Electronics & Packaging, 2023, 23(4): 040306 .

参考文献

[1] KIM N S, AUSTIN T, BLAAUW D, et al. Leakage current: Moore’s law meets static power[J]. Computer, 2003, 36(12): 68-75.
[2]DONGQ, WANG Z H, LIMJ, et al. A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination[C]//2018 IEEE International Solid-State Circuits Conference(ISSCC), Feb. 11-15, 2018, San Francisco, CA, USA. New York: IEEE,2018.
[3]CHENA. A review of emerging non-volatile memory(NVM) technologies and applications[J]. Solid-State Electronics, 2016, 125: 25-38.
[4] IKEGAWA S, MANCOFF F B, JANESKY J, et al. Magnetoresistive random access memory: Present and future[J]. IEEE Transactions on Electron Devices, 2020, 67(4): 1407-1419.
[5] CAI H, HAN M L, ZHOU Y L, et al. Triple sensing current margin for maintainable MRAM yield at sub-100% tunnel magnetoresistance ratio[J]. IEEE Transactions on Magnetics, 2021, 57(2): 3400305.
[6]BAGHERIYE L, TOOFAN S, SAEIDI R, et al. A novel sensing circuit with large sensing margin for embedded spin-transfer torque MRAMs[C]//2018 IEEE International Symposium onCircuitsand Systems (ISCAS). May 27-30,2018, Florence, Italy. New York: IEEE, 2018.
[7] KIM J, RYU K, KANG S H, et al. A novel sensing circuit for deep submicron spin transfer torque MRAM (STT-MRAM)[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2012, 20(1): 181-186.
[8]REN F B, PARK H, DORRANCE R, et al. A body-voltage-sensing-based short pulse reading circuit for spin-torque transfer RAMs (STT-RAMs)[C]// 13th Int'l Symposium on Quality Electronic Design(ISQED), Santa Clara, CA, USA.New York: IEEE,2012.
[9]KIM J, NA T, KIM J P, et al. A split-path sensing circuit for spin torque transfer MRAM (STT-MRAM)[J].IEEE Transactions on Circuits and SystemsII: Express Briefs, 2014, 61(3): 193-197.
[10] 赵巍胜, 王昭昊, 彭守仲, 等. STT-MRAM存储器的研究进展[J]. 中国科学：物理学力学天文学, 2016, 46(10): 107306.
[11]YAN J, LIU DS, YU HM, et al. A high-reliability reading scheme for STT-MRAM with a symmetric dual-reference sensing amplifier[C]//2018 14thIEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct.31- Nov.3, Qingdao, China. New York: IEEE, 2018.
[12]ZHAO W S, CHAPPERT C, JAVERLIACV, et al. High speed, high stability and low power sensing amplifier for MTJ/CMOS hybrid logic circuits[J]. IEEE Transactions on Magnetics, 2009, 45(10):3784-3787.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

应用于STT-MRAM存储器的高可靠灵敏放大器设计

Design of High-Reliability Sensing Amplifier Applied to STT-MRAM Memory

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