光刻机镜头漏光对光刻工艺的影响

doi:10.16257/j.cnki.1681-1070.2023.0025

电子与封装 ›› 2023, Vol. 23 ›› Issue (4): 040401 . doi: 10.16257/j.cnki.1681-1070.2023.0025

光刻机镜头漏光对光刻工艺的影响

梁宗文;石浩;王雯洁;王溯源;章军云

南京电子器件研究所，南京 210016

收稿日期:2022-07-25 出版日期:2023-04-27 发布日期:2023-03-24
作者简介:梁宗文（1992—），男，山东临沂人，硕士，主要从事化合物半导体光刻工艺相关工作。

Impact of Lithography Lens Leakage onLithography Process

LIANG Zongwen, SHI Hao, WANG Wenjie, WANG Suyuan, ZHANG Junyun

Nanjing Electronic Devices Institute, Nanjing210016, China

Received:2022-07-25 Online:2023-04-27 Published:2023-03-24

摘要/Abstract

摘要： 通过GaAs单片微波集成电路（MMIC）光刻工艺，试验得到不同掩模版透光区占空比下光刻机镜头的漏光率，分析了漏光率对曝光能量宽裕度以及光刻胶形状的影响。通过试验测量得出，掩模版透光区占空比的增加会导致曝光镜头的漏光率升高，进一步使得光刻工艺的能量宽裕度变小。同时，过高的漏光率会造成显影后图形的光刻胶损失，使光刻胶图形的对比度变差，从而严重影响GaAs MMIC光刻工艺的图形质量，造成器件性能退化，降低产品良率。

关键词: 365nm步进式光刻机, 漏光, 掩模版, GaAs单片微波集成电路

Abstract: Lithography lens leakage rates under different mask opening ratiosare obtained through GaAs MMIC lithography process, and the impact of leakage rate on exposure energy margin and lithography shape is analyzed.The experimental results show that the increase of the duty ratio of the mask’s transmission zone will lead to the increase of the leakage rate of the exposure lens, and further reduce the energy margin of the lithography process.Meanwhile, high light leakage rate will cause the loss of photoresist of the graphics after image develop, and make the contrast of the photoresist graphics deteriorate, which seriously affects the graphics quality of GaAs MMIC lithography process, resulting in device performance degradation and reduced product yield.

Key words: 365 nm stepper lithography, leakage, mask, GaAs MMIC

中图分类号:

TN305.7

梁宗文;石浩;王雯洁;王溯源;章军云. 光刻机镜头漏光对光刻工艺的影响[J]. 电子与封装, 2023, 23(4): 040401 .

LIANG Zongwen, SHI Hao, WANG Wenjie, WANG Suyuan, ZHANG Junyun. Impact of Lithography Lens Leakage onLithography Process[J]. Electronics & Packaging, 2023, 23(4): 040401 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

光刻机镜头漏光对光刻工艺的影响

Impact of Lithography Lens Leakage onLithography Process

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