大功率LED芯片直接固晶热电制冷器主动散热*

doi:10.16257/j.cnki.1681-1070.2023.0124

电子与封装 ›› 2023, Vol. 23 ›› Issue (10): 100201 . doi: 10.16257/j.cnki.1681-1070.2023.0124

• 封装、组装与测试 • 下一篇

大功率LED芯片直接固晶热电制冷器主动散热^*

梁仁瓅^1,2,牟运³,彭洋⁴,胡涛¹,王新中¹

1. 深圳信息职业技术学院信息技术研究所，广东深圳 518172；2.电子科技大学深圳高等研究院，广东深圳 518110；3. 中山大学集成电路学院，广东深圳 518107；4. 华中科技大学航空航天学院，武汉 430074

收稿日期:2023-04-24 出版日期:2023-10-31 发布日期:2023-05-24
作者简介:梁仁瓅（1993—），男，山西大同人，博士，副研究员，主要从事先进电子封装材料与技术研究。

Active Heat Dissipation of High-Power LED Chip Directly Bonded on Thermoelectric Cooler

LIANG Renli^1,2, MOU Yun³, PENG Yang⁴, HU Tao¹, WANG Xinzhong¹

1. Information Technology Research Institute, Shenzhen Institute and Information Technology, Shenzhen 518172, China;2.Shenzhen Institute for Advanced Study, University of Electronic Science andTechnology of China, Shenzhen 518110,China;3.School of Integrated Circuits,Sun Yat-sen University,Shenzhen518107,China;4. School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

Received:2023-04-24 Online:2023-10-31 Published:2023-05-24

摘要/Abstract

摘要： 发光二极管（LED）作为新一代绿色固态照明光源，已广泛应用于照明和显示等领域，但散热问题一直是大功率LED封装的关键技术瓶颈。采用大功率LED芯片直接固晶热电制冷器（TEC）的主动散热方法，可增强大功率LED的热耗散，提升大功率LED的发光性能和长期可靠性。利用高精度陶瓷基板和纳米银膏材料制备出高性能TEC，TEC冷端温度最低可达-22.2℃。将LED芯片直接固晶于TEC冷端的陶瓷基板焊盘上，实现LED芯片与TEC的集成封装，制备出LED-TEC主动散热模块。在芯片电流为1.0 A时，由于热电制冷的珀尔帖效应，LED-TEC模块可将LED芯片的工作温度从232℃降低到123℃（降温幅度为109℃），且可使其输出光功率从1087 mW提升到1479 mW，光功率提升幅度达到36.1%。

关键词: 大功率LED, 主动散热, 热电制冷器, 芯片固晶, 光热性能

Abstract: Light-emitting diode (LED) has been considered as a new generation of green solid-state lighting source, which has been widely used in lighting and display and other fields. However, heat dissipation problem is a key technical bottleneck of high-power LED packaging.An active heat dissipation method of high-power LED chip directly bonded on thermoelectric cooler (TEC) is adopted to enhance the heat dissipation of high-power LED, which can improve the optical performance and long-term reliability of high-power LED.High-performance TECs are prepared by utilizing high-precision ceramic substrates and nano-silver paste materials, and the temperature of the TEC cold-side can reach as low as -22.2 ℃.The LED chip is directly bonded on the cold-side ceramic substrate of TEC. The LED chip and TEC are integrated and packaged to prepare an LED-TEC active heat dissipation module.At a chip current of 1.0 A, due to the Palter effect of thermoelectric cooling, the LED-TEC module can reduce the operating temperature of LED chips from 232 ℃to 123 ℃ (decreased by 109 ℃), and the output light power of LED chips can be increased by 36.1%, from 1087 mW to 1479 mW.

Key words: high-power LED, active heat dissipation, thermoelectric cooler, chip bonding, opto-thermal performance

中图分类号:

TN305.94

梁仁瓅,牟运,彭洋,胡涛,王新中. 大功率LED芯片直接固晶热电制冷器主动散热^*[J]. 电子与封装, 2023, 23(10): 100201 .

LIANG Renli, MOU Yun, PENG Yang, HU Tao, WANG Xinzhong. Active Heat Dissipation of High-Power LED Chip Directly Bonded on Thermoelectric Cooler[J]. Electronics & Packaging, 2023, 23(10): 100201 .

参考文献

[1] SCHUBERT E F, KIM J K. Solid-state light sources getting smart[J]. Science, 2005, 308(5726): 1274-1278.
[2]李晋闽，刘志强，魏同波，等. 中国半导体照明发展综述[J]. 光学学报, 2021, 41(1): 285-297.
[3]彭洋，陈明祥，罗小兵. 深紫外LED封装技术现状与展望[J]. 发光学报, 2021, 42(4): 542-559.
[4] LUO X B, HU R, LIU S, et al. Heat and fluid flow in high-power LED packaging and applications[J]. Progress in Energy and Combustion Science, 2016, 56(2): 1-32.
[5] MOU Y, WANG H, PENG Y, et al. Enhanced heat dissipation of high-power light-emitting diodes by Cu nanoparticle paste[J]. IEEE Electron Device Letters, 2019, 40(6): 949-952.
[6]王哲，王永通，刘佳欣，等.内嵌陶瓷电路板的PCB基板制备及其LED封装性能[J]. 发光学报, 2022, 43(7): 1139-1146.
[7]彭洋，陈明祥. 三维结构石英透镜提高DUV-LED的发光效率[J]. 电子与封装, 2023, 23(1): 010601.
[8] LAI Y, CORDERO N, BARTHEL F, et al. Liquid cooling of bright LEDs for automotive applications[J]. Applied Thermal Engineering, 2009, 29(5-6): 1239-1244.
[9] RAMOS-ALVARADO B, FENG B, PETERSON G P. Comparison and optimization of single-phase liquid cooling devices for the heat dissipation of high-power LED arrays[J]. Applied Thermal Engineering, 2013, 59(1-2): 648-659.
[10] TANG Y, LIN L, ZHANG S W, et al. Thermal management of high-power LEDs based on integrated heat sink with vapor chamber[J]. Energy Conversion and Management, 2017, 151(1): 1-10.
[11] LI J H, MA B K, WANG R S, et al. Study on a cooling system based on thermoelectric cooler for thermal management of high-power LEDs[J]. Microelectronics Reliability, 2011, 51(12): 2210-2215.
[12] FREDES P, RAFF U, GRAMSCH E, et al. Junction temperature control of UV-C LEDs based on a thermoelectric cooler device[J]. Microelectronics Reliability, 2019, 98: 24-30.
[13] WANG J, ZHAO X J, CAI Y X, et al. Experimental study on the thermal management of high-power LED headlight cooling device integrated with thermoelectric cooler package[J]. Energy Conversion and Management, 2018, 159: 415-415.
[14] LI S, LIU J, L DING L, et al. Active thermal management of high-power LED through chip on thermoelectric cooler[J]. IEEE Transactions on Electron Devices, 2021, 68(4): 1753-1756.
[15] YANG H N, ZHANG J S, XIA G J, et al. Analysis of air-cooling module with multi-TEC[J]. International Communications in Heat and Mass Transfer, 2022, 134: 106041.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

大功率LED芯片直接固晶热电制冷器主动散热^*

Active Heat Dissipation of High-Power LED Chip Directly Bonded on Thermoelectric Cooler

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