中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2023, Vol. 23 ›› Issue (9): 090302 . doi: 10.16257/j.cnki.1681-1070.2023.0126

• 电路与系统 • 上一篇    下一篇

用于GaN半桥驱动的高可靠欠压锁定电路*

李亮1,周德金2,3,黄伟3,陈珍海2,4   

  1. 1.苏州市职业大学电子信息工程学院,江苏 苏州 215104;2.清华大学无锡应用技术研究院,江苏 无锡 214072; 3.复旦大学微电子学院,上海 200433;4.黄山学院智能微系统安徽省工程技术研究中心,安徽 黄山 245041
  • 收稿日期:2023-03-25 出版日期:2023-09-25 发布日期:2023-09-25
  • 作者简介:李亮(1979—),男,内蒙古察右前旗人,硕士,副教授,主要研究方向为模拟集成电路设计。

High-Reliable Undervoltage Lockout Circuit for GaN Half-Bridge Driver

LI Liang1, ZHOU Dejin2, 3, HUANG Wei3, CHEN Zhenhai2, 4   

  1. 1.?School ofElectronic Information Engineering, Suzhou Vocational University, Suzhou215104,China; 2. Wuxi Research Institute of Applied Technologies, TsinghuaUniversity, Wuxi214072, China; 3. School of Microelectronics,Fudan University, Shanghai200433, China; 4. EngineeringTechnology Research Center of Intelligent Microsystems of Anhui Province, Huangshan University, Huangshan245041, China
  • Received:2023-03-25 Online:2023-09-25 Published:2023-09-25

摘要: 设计了一种用于GaN栅驱动芯片的高可靠欠压锁定电路,该电路能精确响应并输出保护信号以确保电路安全。欠压锁定采用快速响应的差分比较器电路与电阻分压采样,避免了反馈回路开关噪声引起的电路不稳定问题。在欠压锁定电路中加入电源毛刺检测电路以确保产生稳定可靠的欠压锁定信号。基于CSMC 0.18 μm BCD工艺,完成了电路设计。仿真结果表明,供电电压上升时阈值电压为7.3 V、下降时阈值电压为5.8 V,迟滞量为1.5 V,避免了电路在阈值电压附近反复开启与关断。

关键词: 半桥电路, 欠压锁定, 比较器, 毛刺检测

Abstract: A high-reliable undervoltage lockout circuit is designed for GaN gate driver chips, which can accurately respond and output protection signal to ensure circuit safety. The undervoltage lockout circuit uses a fast response differential comparator circuit and a resistive voltage divider for sampling to avoid circuit instability caused by switching noise in the feedback loop. A power supply burr detection circuit is added to the undervoltage lockout circuit to ensure the generation of a stable and reliable undervoltage lockout signal. The circuit is designed based on the CSMC 0.18 μm BCD process. The simulation results show that the threshold voltage is 7.3 V when the supply voltage rises and 5.8 V when it falls, with a hysteresis of 1.5 V, avoiding the circuit from repeatedly turning on and off near the threshold voltage.

Key words: half-bridge circuit, undervoltage lockout, comparator, burr detection

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