关键词: 高压ESD器件, 绝缘体上硅工艺, 开放式基极堆叠三极管

Abstract: Silicon on insulator (SOI) process has the characteristics of small isolation area and good isolation performance, and has been widely adopted in the field of power semiconductors. Based on the deep submicron SOI process technology node and the characteristics of high voltage devices above 100 V, the problem of weak robustness of high voltage electrostatic discharge (ESD) devices has become one of the technical difficulties in the design of ESD protection, and the selection and design of high voltage ESD protection devices is particularly important. In order to improve the robustness of the high voltage ESD device of SOI process, the ESD protection device is selected by combining the characteristics and operating performance of the device during electrostatic discharge, and the appropriate device sizes are designed to obtain a good ESD capability. A controller circuit for driving MOSFET using the design has passed the 4000 V human body model (HBM) ESD test, and the design has achieved good results on the issue of robustness of high voltage ESD device protection for SOI process.

Key words: high voltage ESD devices, silicon on insulator process, open base stacked triode