关键词: 多晶电阻, 掺杂, 温度漂移

Abstract: Polycrystalline resistors are widely used in integrated circuits as circuit loads, damping, voltage-sharing or current-sharing. However, the resistance value of polycrystalline doped resistors is determined by the carrier concentration and mobility in practice, and both of them are affected by the temperature, so the resistance value of polycrystalline resistors varies with the change of temperature, and there is a certain temperature coefficient. The temperature drift influence factor of N polycrystalline resistor is investigated and verified by group experiments. Low-temperature-drift and high-precision semiconductor N polycrystalline resistors with a temperature coefficient within ±10×10^-6/℃ are prepared, which ensure the stability of circuits under different temperature environments, and provide a reference for the design of high-stability circuits.

Key words: polycrystalline resistor, doping, temperature drift