关键词: 硅外延, 衬底, 自掺杂, 衬底电阻率

Abstract: The unwanted dopant from heavily doped substrates through gas and solid phase diffusion adhered to the reactor system, which not only incorporated in current epitaxial silicon deposition, but also affected the subsequent epitaxial silicon deposition. That is the system autodoping. Through the experimental design, the influence of different substrate dopants, different substrate resistivity and thickness of epitaxial layers on the system autodoping effect is quantified, and it is confirmed that the products with heavy autodoping in the substrates will have a significant impact on the epitaxial resistivity of subsequent products with light autodoping substrates. Finally, the best scheme to remove the autodoping effect of epitaxial system is given.

Key words: siliconepitaxy, substrates, autodoping, substrateresistivity