关键词: Flash存储器, 擦写循环, 数据保持

Abstract: Classification of memory and the basic structure of Flash memory are introduced, and the characteristics of the reliability test standard of non-volatile memory (NVM) are analyzed. The standards and methods of NVM reliability test published by JEDEC and AEC are compared in terms of test items, test conditions, sample quantity and data graphs. Based on the test standards and methods published by JEDEC and AEC, two MCU chips with memory capacities of 64 KB and 128 KB are used as test objects to design an evaluation test for the reliability of embedded Flash memory in MCU chips, providing a reference for the design and verification of Flash memory.

Key words: Flash memory, erase cycle, data retention