集成超势垒整流器SiC MOSFET的动态可靠性*

doi:10.16257/j.cnki.1681-1070.2025.0138

电子与封装 ›› 2025, Vol. 25 ›› Issue (12): 120401 . doi: 10.16257/j.cnki.1681-1070.2025.0138

集成超势垒整流器SiC MOSFET的动态可靠性^*

孙晶，邓正勋，李航，孙亚宾，石艳玲，李小进

华东师范大学通信与电子工程学院

收稿日期:2025-04-07 出版日期:2025-12-26 发布日期:2025-10-31
作者简介:孙晶（2001—），女，安徽六安人，硕士研究生，研究方向为功率器件及驱动电路。

Dynamic Reliability of SiC MOSFET with Integrated Super Barrier Rectifiers

SUN Jing, DENG Zhengxun, LI Hang,SUN Yabin, SHI Yanling, LI Xiaojin

Schoolof Communication & Electronic Engineering, East China NormalUniversity, Shanghai 200241, China

Received:2025-04-07 Online:2025-12-26 Published:2025-10-31

摘要/Abstract

摘要： 摘要：采用技术计算机辅助设计（TCAD）软件，对集成超势垒整流器（SBR）的对称型SiC MOS器件（DT-SBR-MOS）和非对称型SiC MOS器件（AT-SBR-MOS）的热特性、非钳位感性负载开关（UIS）过程和短路（SC）能力进行分析，揭示了新型SiC MOS器件的动态可靠性机理，弥补了SiC MOS器件可靠性研究的缺失。研究结果表明，在相同输入功率条件下，由于SBR结构的不同，AT-SBR-MOS的反向导通热阻较DT-SBR-MOS降低了17%。在单次脉冲测试中，因AT-SBR-MOS半包围式的P型区增强了对N型漂移区的耗尽，使其雪崩耐受能量比DT-SBR-MOS高出11%。此外，由于AT-SBR-MOS比DT-SBR-MOS具有更小的电流流通路径，短路耐受时间延长了2 µs。综合数据表明，AT-SBR-MOS的反向导通热特性、雪崩耐受能力和短路耐受性能均优于DT-SBR-MOS，为高性能SiC功率器件设计提供了重要的参考依据。

关键词: SiC功率器件, 超势垒整流器, 热特性, 非钳位感性负载开关

Abstract: Technology computer-aided design (TCAD) software is used to analyze the thermal characteristics, unclamped inductive load switching (UIS) process and short circuit (SC) capability of symmetric (DT-SBR-MOS) and asymmetric (AT-SBR-MOS) SiC MOS devices with integrated super barrier rectifiers (SBRs), revealing the dynamic reliability mechanism of the two new SiC MOS devices, and filling a gap in SiC MOS device reliability research. The results show that the reverse conduction thermal resistance of the AT-SBR-MOS is 17% lower than that of the DT-SBR-MOS under the same input power condition due to the different SBR structures. In the single-pulse test, the avalanche tolerance energy of the AT-SBR-MOS is 11% higher than that of the DT-SBR-MOS because the semi-enclosed P-well region of the AT-SBR-MOS enhances the depletion of the N-type drift region. In addition, the short-circuit withstand time of the AT-SBR-MOS is improved by 2 µs due to its smaller current flow path than that of the DT-SBR-MOS. The comprehensive data show that the reverse conduction thermal characteristics, avalanche tolerance, and short-circuit withstand performance of the AT-SBR-MOS are better than those of the DT-SBR-MOS, which provides an important reference for the design of high-performance SiC power devices.

Key words: SiC power device, super barrier rectifier, thermal property, unclamped inductive load switching

中图分类号:

TN386.1

孙晶，邓正勋，李航，孙亚宾，石艳玲，李小进. 集成超势垒整流器SiC MOSFET的动态可靠性^*[J]. 电子与封装, 2025, 25(12): 120401 .

SUN Jing, DENG Zhengxun, LI Hang,SUN Yabin, SHI Yanling, LI Xiaojin. Dynamic Reliability of SiC MOSFET with Integrated Super Barrier Rectifiers[J]. Electronics & Packaging, 2025, 25(12): 120401 .

参考文献

[1] 孙培元, 孙立杰, 薛哲, 等. 高压SiC MOSFET研究现状与展望[J]. 电子与封装, 2023, 23(1): 010111.
[2] ISHIGAKI T, MURATA T, KINOSHITA K, et al. Analysis of degradation phenomena in bipolar degradation screening process for SiC-MOSFETs[C]//2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019: 259-262.
[3] SKOWRONSKI M, HA S. Degradation of hexagonal silicon-carbide-based bipolar devices[J]. Journal of Applied Physics, 2006, 99(1): 011101.
[4] EBIHARA Y, UEHARA J, ICHIMURA A, et al. Suppression of bipolar degradation in deep-P encapsulated 4H-SiC trench MOSFETs up to ultra-high current density[C]//2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019: 35-38.
[5] 阳治雄, 曾荣周, 吴振珲, 等. Si/SiC超结LDMOSFET的短路和温度特性[J]. 半导体技术, 2023, 48(12): 1071-1076.
[6] YAMASHITA N, MURAKAMI N, YACHI T. Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode[J]. IEEE Transactions on Power Electronics, 1998, 13(4): 667-673.
[7] SUNG W, BALIGA B J. On developing one-chip integration of 1.2 kV SiC MOSFET and JBS diode (JBSFET)[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8206-8212.
[8] HSU F J, YEN C T, HUNG C C, et al. High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier[C]//2017 29th International Symposium on Power Semiconductor Devices and IC’s (ISPSD), Sapporo, Japan, 2017: 45-48.
[9] 吴焕杰. 一种集成SBD结构的碳化硅MOSFET[D]. 成都: 电子科技大学, 2021.
[10] RODOV V, ANKOUDINOV A L, TAUFIK. Super barrier rectifier: a new generation of power diode[J]. IEEE Transactions on Industry Applications, 2008, 44(1): 234-237.
[11] BODEKER C, VOGT T, SILBER D, et al. Criterion for the stability against thermal runaway during blocking operation and its application to SiC diodes[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2016, 4(3): 970-977.
[12] DENG Z X, LI X J, SUN Y B, et al. SiC trench MOSFET with N-base super barrier rectifier embedded for optimizing reverse characteristic[C]//2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), Zhuhai, China, 2021: 101-102.
[13] YANG S Y, BRYANT A, MAWBY P, et al. An industry-based survey of reliability in power electronic converters[J]. IEEE Transactions on Industry Applications, 2011, 47(3): 1441-1451.
[14] SHE X, HUANG A Q, LUCIA O, et al. Review of silicon carbide power devices and their applications[J]. IEEE Transactions on Industrial Electronics, 2017, 64(10): 8193-8205.
[15] 张岩, 薛少鹏, 李阳, 等. 安全工作区外重复过电压硬开关下SiC MOSFET参数退化特性与机理[J]. 电工技术学报, 2025, 40(16): 5029-5043.
[16] SCHWABE C, LIU X, WASSERMANN T N, et al. SiC MOSFET threshold voltage stability during power cycling testing and the impact on the result interpretation[C]//2023 IEEE International Reliability Physics Symposium (IRPS), Monterey, CA, USA, 2023: 1-6.
[17] 梁世维, 杨鑫, 陈家祺, 等. 电离辐射总剂量效应对SiC MOSFET器件雪崩鲁棒性的影响[J]. 现代应用物理, 2024, 15(6): 104-111.
[18] LIANG S W, YANG Y, SHU L, et al. Modeling irradiation-induced degradation for 4H-SiC power MOSFETs[J]. IEEE Transactions on Electron Devices, 2023, 70(3): 1176-1180.
[19] HUANG X, WANG G Y, LI Y S, et al. Short-circuit capability of 1200 V SiC MOSFET and JFET for fault protection[C]//2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Long Beach, CA, USA, 2013: 197-200.
[20] 廖征翔. 碳化硅沟槽栅MOSFET短路特性与加固结构设计[D]. 成都: 电子科技大学, 2024.
[21] ZHOU X T, PANG H Y, JIA Y P, et al. SiC double-trench MOSFETs with embedded MOS-channel diode[J]. IEEE Transactions on Electron Devices, 2020, 67(2): 582-587.
[22] 欧阳钢. SiC MOSFET集成器件性能与UIS可靠性研究[D]. 成都: 电子科技大学, 2022.
[23] 王迎春, 马捷, 侯杰, 等. 超结DMOSFET元胞区与终端区的耐压匹配优化设计[J]. 半导体技术, 2022, 47(12): 965-971.
[24] LAMBATE H, NAKANEKAR S, TONAPI S. Thermal characterization of the IGBT modules used in hybrid electric vehicles[C]//Fourteenth Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), Orlando, FL, USA, 2014: 1086-1091.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

集成超势垒整流器SiC MOSFET的动态可靠性^*

Dynamic Reliability of SiC MOSFET with Integrated Super Barrier Rectifiers

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价

[1]	徐海铭, 王登灿, 吴素贞. 1 200 V SiC器件单粒子烧毁效应研究[J]. 电子与封装, 2025, 25(8): 80401-.
[2]	廖志平,罗冬华. LTCC基板微通道进出口布局结构散热性能仿真分析^*[J]. 电子与封装, 2024, 24(3): 30208-.
[3]	刘超铭;王雅宁;魏轶聃;王天琦;齐春华;张延清;马国亮;刘国柱;魏敬和;霍明学. SiC功率器件辐照效应研究进展[J]. 电子与封装, 2022, 22(6): 60101-.