关键词: 静电防护；可控硅技术；MLSCR

Abstract: The characteristic dimensions of semiconductor devices in integrated circuits have been continuously reduced, and integrated circuits are more sensitive to ESD shocks. Electrostatic protection has become one of the most important reliability indicators in integrated circuits, and ESD protection structure has also become a difficult problem in chip design. With the increase in the size of integrated circuits, the number of pins on the chips, and a large amount of area used for ESD protection circuits, mainly leading to increased costs. The ESD protection device with a Silicon Controlled Rectifier(SCR) structure has the highest unit area ESD performance compared to other known protection structures, and therefore has become the preferred choice for low-cost on-chip ESD designs. Focuse on the ESD protection structure of the improved transverse SCR (MLSCR, also known as N+bridge SCR). The key characteristic indexes are analyzed with theoretical analysis and experimental data. The experimental data is based on the flow results of a 0.18um 5VCMOS process. The working principle of the SCR structure and the key trigger voltage and maintenance voltage parameters are explained, and an improvement plan is proposed.

Key words: electrostatic protection; silicon controlled rectifier; MLSCR