中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2020, Vol. 20 ›› Issue (2): 020303 . doi: 10.16257/j.cnki.1681-1070.2020.0209

• 电路设计 • 上一篇    下一篇

基于130 nm CMOS工艺的5 Gbit/s 10:1并串转换芯片

孟辰星,黄光明,郭迪   

  1. 华中师范大学物理科学与技术学院硅像素实验室,武汉 430079
  • 收稿日期:2019-11-05 出版日期:2020-02-24 发布日期:2020-02-24
  • 作者简介:孟辰星(1995—),女,湖南常德人,硕士,主要从事模拟IC设计。

5 Gbit/s 10 to 1 Parallel-to-Serial Conversion Chip Based on 130 nm CMOS

MENG Chenxing, HUANG Guangming, GUO Di   

  1. Silicon Pixel Laboratory, College of Physical Science and Technology, Central China Normal University, Wuhan430079, China
  • Received:2019-11-05 Online:2020-02-24 Published:2020-02-24

摘要: 介绍了一种基于GSMC 130 nm CMOS工艺的高速率低功耗10:1并串转换芯片。在核心并串转换部分,该芯片使用了多相结构和树型结构相结合的方式,在输入半速率时钟的条件下,实现了10路500 Mbit/s并行数据到1路5 Gbit/s串行数据的转换。全芯片完整后仿真结果显示,在工作电压(1.2±10%) V、温度-55~100 ℃、全工艺角条件下,该芯片均可正确完成10:1并串转换逻辑功能,并输出清晰干净的5 Gbit/s眼图。在典型条件下,芯片整体功耗为25.2 mW,输出电压摆幅可达到260 mV。

关键词: 并串转换, 收发器, 高速串行通信

Abstract: This article describes a high-speed, low-power 10:1 parallel-to-serial conversion chip based on the GSMC 130 nm CMOS . In the core parallel-serial conversion part, the chip uses a combination of a multi-phase structure and a tree structure to realize conversion of 10 channels of 500 Mbit/s parallel data to 1 channel of 5 Gbit/s serial data under the condition of inputting a half rate clock. After the complete chip is completed, the simulation results show that the chip can correctly complete the 10:1 parallel-to-serial conversion logic function at a working voltage of (1.2±10%) V and a temperature of -55-100 ℃ under full process angle, and the output is a clear 5 Gbit/s eye diagram. Under typical conditions, the overall power consumption of the chip is 25.2 mW, and the output voltage swing can reach 260 mV.

Key words: parallel-to-serial conversion, transceiver, high speed serial communication

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