关键词: Halo, 短沟效应, 离子注入, 掺杂分布, 多晶条宽

Abstract: Short-Channel Effect（SCE）has long been deemed as one of the critical challenges facedin scaling down MOS devices.Halo structure effectively restrains SCE and improves the performance of small-size devices.During Halo implantation,tilt and energy impact on temperature property and process fluctuation,and POLY CD variety are considered.The paper compares various Halo implantation conditions with equal saturation current at room temperature.The experiment result shows that the best implant condition is 60°tilt and 100 KeV energy for 130 nm POLY CD,under which devices have the best temperature stability and process tolerance.

Key words: Halo, short channel effect, ion implantation, doping distribution, POLY CD