中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2020, Vol. 20 ›› Issue (8): 080403 . doi: 10.16257/j.cnki.1681-1070.2020.0809

• 微电子制造与可靠性 • 上一篇    下一篇

热波探针在离子注入表征上的应用

张蕊   

  1. 北京烁科中科信电子装备有限公司,北京 101100
  • 接受日期:2020-03-10 出版日期:2020-08-25 发布日期:2020-04-16
  • 作者简介:张 蕊(1987—),女,河南商丘人,硕士研究生学历,中级工程师,主要从事离子注入机工艺表征及测试方面的工作。

Application of Thermal Wave Probe on the Monitor of Implantation

ZHANG Rui   

  1. Beijing Semicore ZKX Electronics Equipment Co., Ltd., Beijing 101100, China
  • Accepted:2020-03-10 Online:2020-08-25 Published:2020-04-16

摘要: 离子注入工艺稳定性的多个表征方法中,热波探针法快速、灵敏且无损,可用于离子注入工艺角度、注入剂量及均一性的表征。介绍了热波探针应用的理论依据和数据实例,并结合数据实例研究了热波探针法的应用特点和规律。当热波探针应用于离子注入角度表征时,需要保证前期机械校准的有效性及隧穿效应敏感区角度的选用。当应用于剂量准确性和均一性表征时,则需要将注入剂量控制在中、低等剂量范围内,避开隧穿效应敏感区,还需有效规避热晶圆效应。

关键词: 离子注入, 热波探针, 角度, 剂量, 均一性

Abstract: Thermal wave probe, as a monitor method for implantation angle, dosage, and uniformity, is efficient, sensitive and contact-less. In the paper, thermal wave probe theoretical basis and data instance are introduced. The application characters and rules are studied. When used for angle monitor, mechanical position calibration and selected implant conditions are essential. When used for dosage and uniformity monitor, the dose range must be in medium and low range. The implant condition should get rid of channel effect and hot wafer effect.

Key words: implantation, thermal wave probe, angle, dosage, uniformity

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