关键词: 辐射加固, 总剂量效应, 热载流子效应, 0.18 μm

Abstract: Total ionizing dose radiation-hard technology is developed based on 0.18 μm CMOS process.The normal performance of the 1.8 V NMOS transistors manufactured in this process is stable.And there is no shift of threshold voltage and off-state current at 500 krad(Si)irradiating.The HCI lifetime is estimated to study the hot carrier injection effect of NMOS transistors.The HCI lifetime is 5.75 year,longer than 0.2 year under 1.1 Vdd.The performance affected by both total dose irradiation and the hot-carrier injection effects is explored by compared the irradiated NMOS transistors with the one without irradiation.The transistors pro-irradiated and annealed are less influenced by hot-carrier injection effect.The radiation-hardening process does not exacerbate hot-carrier injection effect.

Key words: radiation-hard, total ionizing dose effect, hot carrier injection effect, 0.18 μm