表1 本文与部分参考文献中电平转换电路的参数对比 4 结论 本文设计了一种低功耗高速率宽电平范围的电平转换单元,采用低阈值NMOS管拓宽了电压范围;采用使能控制降低了电路静态功耗;增加PMOS管改善响应速度提高转换速率。实际流片结果表明,以该电平转换单元为模块设计的四通道电平转换电路静态功耗小,在1.0~5.5 V电压范围内转换速率最高可达800 Mbps。电压转换范围和静态功耗达到了预期,转换速率略低了一点,还需要进一步优化改善。基于本文提出的电平转换单位进行电路设计,具有低功耗高速率宽电平等特点,在高速电平转换接口领域有较大的优势和应用前景。 参考文献: [1] MATSUZUKA R, HIROSE T, SHIZUKU Y, et al. An 80-mV-to-1.8-V conversion-range low-energy level shifter for extremely low-voltage VLSIs[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2017, 64(8): 1-10. [2] ZHANG B, LIANG L, WANG X. A new level shifter with low power in multi-voltage system[C]// 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, IEEE BEIJING SECTION, 2006: 1857-1859. [3] PAN D, LI H W, WILAMOWSKI B M. A low voltage to high voltage level shifter circuit for MEMS application[C]// Proceedings of the 15th Biennial University/Government/ Industry Microelectronics Symposium, 2003, 128-131. [4] RAHAMAN A, JEONG D Y, JIN J. High speed and wider swing, level shifter using low-temperature poly-silicon oxide TFTs[J]. IEEE Electron Device Letters, 2019, 99: 1-1. [5] HASANBEGOVIC A, AUNET S. Low-power subthreshold to above threshold level shifter in 90 nm process[C]// 2009 NORCHIP, 2009: 1-4. [6] STUART N W, BENTON H C, TRAVIS N B. An energy-efficient subthreshold level converter in 130 nm CMOS[J]. IEEE Trans On Circuits and System-II, 2010, 57(4): 488-570. [7] 周子昂,吴定允,徐坤,等. 一种基于CMOS工艺的电平转换芯片[J]. 电子与封装, 2011, 11(3): 22-24. [8] LUTZ D, SEIDEL A, WICHT B. A 50 V, 1.45 ns, 4.1 pJ high-speed low-power level shifter for high-voltage DCDC converters[C]// ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC), 2018, 126-129. [9] 卢奕岑,蒋见花,袁甲,等. 宽范围低功耗亚阈值电平转换单元的设计[J]. 微电子学与计算机, 2015(8): 77-81. [10] ASHOUEI M, LUIJMES H, STUIJT J, et al. Novel wide voltage range level shifter for near-threshold designs[C]// 2010 17th IEEE International Conference on Electronics, Circuits and Systems, 2010, 285-288.
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