17~21 GHz 6 bit高精度数字移相器的设计

doi:10.16257/j.cnki.1681-1070.2022.1207

摘要/Abstract

摘要： 采用0.15 μm GaAs赝配高电子迁移率晶体管（PHEMT）工艺，研制了一款高精度17~21 GHz 6 bit高精度数字移相器。该移相器5.625°移相单元采用嵌入式LC拓扑结构，11.25°和22.5°移相单元采用嵌入式全通网络拓扑结构，45°、90°和180°移相单元采用开关选择型多阶高、低通网络拓扑结构；驱动单元采用直接耦合场效应晶体管逻辑（DCFL）结构。测试结果表明，在17~21 GHz工作频率内，该移相器插入损耗的绝对值小于8.5 dB，均方根相位误差（RMS）值小于1.8°，移相寄生调幅在-0.8 dB和+0.6 dB之间，电压驻波比（VSWR）小于1.5。

关键词: 数字移相器, GaAs, 赝配高电子迁移率晶体管, 高精度

Abstract: A 17-21 GHz 6 bit high-precision digital phase shifter is fabricated using 0.15 μm GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 5.625° phase shifting units of the phase shifter use the embedded LC topology, the 11.25° and 22.5° phase shifting units use the embedded all-pass network topology, while the switch-selective multi-order high-pass and low-pass network topology is implemented in 45°, 90°and 180°phase shifting units. The drive unit uses direct coupled FET logic (DCFL) structure. The test results show that in the frequency range of 17-21 GHz, the absdute value of the insertion loss of the phase shifter is less than 8.5 dB, the root-mean-square (RMS) of phase error is less than 1.8°, the phase shift parasitic amplitude is between -0.8 dB and 0.6 dB, the voltage standing wave ratio (VSWR) is less than 1.5.

Key words: phase shifter, GaAs, pseudomorphic highelectron mobility transistor, high precision

中图分类号:

TN623
TN454

蒋乐;王坤;周宏健;周睿涛;李光超. 17~21 GHz 6 bit高精度数字移相器的设计[J]. 电子与封装, 2022, 22(12): 120302 .

JIANG Le, WANG Kun, ZHOU Hongjian, ZHOU Ruitao, LI Guangchao. Design of 17-21 GHz 6 bit High Precision Digital Phase Shifter[J]. Electronics & Packaging, 2022, 22(12): 120302 .

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中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊