中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

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电子与封装 ›› 2019, Vol. 19 ›› Issue (7): 037 -39. doi: 10.16257/j.cnki.1681-1070.2019.0710

• 微电子制造与可靠性 • 上一篇    下一篇

GaAs通孔刻蚀微掩模形成机理研究

高渊   

  1. 中国电子科技集团公司第十三研究所,石家庄 050051
  • 收稿日期:2019-04-28 出版日期:2019-07-18 发布日期:2019-07-18
  • 作者简介:高 渊(1987—),男,河北石家庄人,毕业于河北工业大学,硕士研究生,主要从事GaAs、GaN半导体工艺开发工作。

The Research of Micro Mask Formation Mechanism in GaAs Via Etching Process

GAOYuan   

  1. China Electronics Technology Group Corporation No.13 Research Institute,Shi jiazhuang 050051,China
  • Received:2019-04-28 Online:2019-07-18 Published:2019-07-18

摘要: 通孔刻蚀是GaAs制造工艺的重要环节,通过通孔刻蚀工艺实现GaAs背面和正面金属导通互连。在通孔刻蚀工艺中,微掩模的形成对器件性能及可靠性产生不利影响。微掩模将阻碍GaAs刻蚀,形成柱状堵孔以及侧壁聚合物等,造成后续背面金属接触不良、粘附不牢,进而影响通孔接触电阻、电感等关键参数,最终影响器件性能及可靠性。分析了GaAs微掩模形成的主要原因和形成机理,通过工艺优化解决了通孔刻蚀堵孔及侧壁聚合物等问题,从而提高了器件性能及可靠性。

关键词: GaAs通孔刻蚀, 微掩模, 聚合物

Abstract: The viaetching play avery important role in GaAsmanufacture.Thebackside metal connect frontal metal through GaAs via.In via etching process,the formation of micro mask impact device parameter and reliability harmfully,which block the GaAs etching and form abundant pillars in GaAs vias Polymer is accumulated on the surface of GaAs via simultaneously,which can cause backside metal connect badly and cling weakly.It will impact somekey parameterssuch asvia resistance and inductance,and will affect device performanceand reliability ultimately.Thispaper analyzesthemain causeand machaism of GaAsmicro mask formation systematically.Thepillar and polymer formation areeliminated through processoptimization,which will improvedeviceperformanceand reliability ultimately.

Key words: GaAsviaetching, micro mask, polymer

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