中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

导航

电子与封装 ›› 2018, Vol. 18 ›› Issue (7): 16 -21. doi: 10.16257/j.cnki.1681-1070.2018.0074

• 电路设计 • 上一篇    下一篇

一种12位84 dB无杂散动态范围的高精度低功耗SAR ADC

谭 萍,高 博,龚 敏,赵 新,钱 正,王堋钰   

  1. 四川大学物理科学与技术学院微电子系,微电子技术四川省重点实验室,成都 610064
  • 出版日期:2018-07-20 发布日期:2020-02-21
  • 作者简介:谭 萍(1993—),女,四川大学微电子学与固体电子学专业硕士研究生,研究方向为超大规模集成电路设计,主要研究低功耗模数转换器。

A 12-bit 84 dB SFDR High-Precision Low-Power SAR ADC

TAN Ping, GAO Bo, GONG Min, ZHAO Xin, QIAN Zheng, WANG Pengyu   

  1. Sichuan Key Lab. of Microelectronics Technology, Division of Microelectronics, College of Physical Science and Technology, Sichuan University, Chengdu 610064, China
  • Online:2018-07-20 Published:2020-02-21

摘要: 由于穿戴设备的能量限制对ADC的功耗提出了更高的要求,所以在本设计的12位高精度低功耗SAR ADC中DAC部分采用VCM-Based电容开关时序来降低功耗;比较器部分通过在低精度模式和高精度模式间切换的方法来减少功耗,同时合理设计脉宽,降低工作时间,进一步降低功耗;SAR逻辑部分的时钟信号由比较器输出控制,减少不必要的功耗浪费,同时实现较高的无杂散动态范围。设计基于CSMC 0.18μm CMOS工艺,在1.8 V电源电压和10 k Sps的采样频率下,得到ADC的性能参数为:无杂散动态范围(SFDR)83.97 d B,信噪失真比(SNDR)71.92 d B,有效位数(ENOB)11.65 bit,总功耗868 n W,品质因数(FOM)28.6 f J/Conv,芯片面积472μm×199μm。

关键词: 生物信号检测, 低功耗, 高精度, SAR ADC, 无杂散动态范围

Abstract: Due to the energy limitations of wearable equipment, the power of ADC has more strict requirements. Therefore, we proposed a 12-bit high-precision low-power SAR ADC in this work,where the capacitor array adopts VCM-Based capacitor switching timing to optimize the power consumption; the comparator switches between low-precision mode and high-precision mode to reduce power consumption, and the pulse width is reasonably designed to shorten the time of comparison and further decrease power consumption.SAR logic clock is controlled by the comparator output, reducing unnecessary waste of power,and the high spurious free dynamic range is achieved. Based on the CSMC 0.18 μm CMOS process at 1.8 V supply voltage and 10 kSps sampling frequency: the Spurious Free Dynamic Range is 83.97 dB, the Signal to Noise and Distortion Ratio (SNDR) is 71.92 dB, the Effective Number of Bits (ENOB) is 11.65 bit, the total power consumption is 868 nW and Figure of Merit (FOM) is 28.6 fJ/Conv, the chip area is 472 μm×199 μm.

Key words: Bio-signaldetection, low-power, high-precision, SAR ADC, SFDR

中图分类号: