镀银板表面粗糙度对纳米银焊膏快速烧结互连质量的影响

doi:10.16257/j.cnki.1681-1070.2024.0076

电子与封装 ›› 2024, Vol. 24 ›› Issue (7): 070201 . doi: 10.16257/j.cnki.1681-1070.2024.0076

• 封装、组装与测试 • 下一篇

镀银板表面粗糙度对纳米银焊膏快速烧结互连质量的影响

李志豪¹,汪松英²,洪少健²,孙啸寒³,曾世堂¹,杜昆²

1. 广州汉源微电子封装材料有限公司，广州? 510663；2. 广州汉源新材料股份有限公司，广州? 510663；3. 天津工业大学电气工程学院，天津? 300387

收稿日期:2023-12-27 出版日期:2024-09-10 发布日期:2024-09-10
作者简介:李志豪（1990—），男，广东茂名人，本科，工程师，主要研究方向为电子封装，包括软钎焊料合金的抗氧化和强化研究、纳米银膏和银膜的烧结工艺研究。

Effect of Surface Roughness of Silver-Plated Plates on the Quality of Rapidly Sintered Interconnections with Nano Silver Solder Paste

LI Zhihao¹, WANG Songying², HONG Shaojian², SUN Xiaohan³, ZENG Shitang¹, DU Kun²

1. Solderwell Microelectronic Packaging Material Co., Ltd.,Guangzhou 510663, China; 2. Solderwell Advanced Materials Co., Ltd., Guangzhou 510663, China; 3.School of Electrical Engineering,Tiangong University, Tianjin 300387, China

Received:2023-12-27 Online:2024-09-10 Published:2024-09-10

摘要/Abstract

摘要： 通过施加15 MPa的压力，在265 ℃空气气氛下使用预制完成的镀银板表面印刷纳米银焊膏组装的三明治结构制备烧结银连接层。研究了3种铜镀银板表面粗糙度对烧结银连接界面结合强度的影响。研究结果表明，烧结时间为8 min、镀银板算术平均表面粗糙度为1.630 μm、最大粗糙度深度为12.030 μm时，可以有效促使烧结银连接层与基板表面形成高强度的冶金连接和机械联锁，最终获得了61.09 MPa的高剪切强度，表明烧结银层与烧结界面的结合强度得到了较大提升。研究结果可为选择合适的基板粗糙度提供实验依据，从而获得高强度、高可靠性的低温快速烧结银互连接头。

关键词: 纳米银焊膏, 剪切强度, 表面粗糙度, 加压烧结, 机械联锁

Abstract: By applying the pressure of 15 MPa, the sintered silver connection layer are prepared using the sandwich structure assembled by nano silver solder paste printed on the surface of the prefabricated silver-plated plate under an air atmosphere of 265 ℃. The effect of surface roughness of three types of copper silver-plated plate on the bonding strength at the interface of sintered silver connection is studied. The research results show that the sintered time is 8 min, the arithmetic average surface roughness of the silver-plated plate is 1.630 μm, and the maximum roughness depth is 12.030 μm, which can effectively promote the formation of high-strength metallurgical connection and mechanical interlocking between sintered silver connection layer surface and the substrate surface. In the end, the high shear strength of 61.09 MPa is obtained, indicating that the bonding strength between sintered silver layer and the sintered interface is greatly improved. The research results can provide experimental basis for selecting suitable substrate roughness, thereby obtaining high-strength and highly reliabie low-temperature and rapidly sintered silver interconnect joints.

Key words: nano silver solder paste, shear strength, surface roughness, pressurized sintering, mechanical interlocking

中图分类号:

TG425

李志豪,汪松英,洪少健,孙啸寒,曾世堂,杜昆. 镀银板表面粗糙度对纳米银焊膏快速烧结互连质量的影响[J]. 电子与封装, 2024, 24(7): 070201 .

LI Zhihao, WANG Songying, HONG Shaojian, SUN Xiaohan, ZENG Shitang, DU Kun. Effect of Surface Roughness of Silver-Plated Plates on the Quality of Rapidly Sintered Interconnections with Nano Silver Solder Paste[J]. Electronics & Packaging, 2024, 24(7): 070201 .

参考文献

[1] 刘璇, 徐红艳, 李红, 等. 应用于功率芯片封装的瞬态液相扩散连接材料与接头可靠性研究进展[J]. 材料导报, 2021, 35(19): 19116-19124.
[2] MILLáN J, GODIGNON P, PERPI?à X, et al. A survey of wide bandgap power semiconductor devices[J]. IEEE Transactions on Power Electronics, 2014, 29(5): 2155-2163.
[3] LAMICHHANE R R, ERICSSON N, FRANK S, et al. A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications[C]// 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC’s (ISPSD), 2014: 414-417.
[4] BUTTAY C, PLANSON D, ALLARD B, et al. State of the art of high temperature power electronics[J]. Materials Science and Engineering: B, 2011, 176(4): 283-288.
[5] PAKNEJAD S A, MANNAN S H. Review of silver nanoparticle based die attach materials for high power/temperature applications[J]. Microelectronics Reliability, 2017, 70: 1-11.
[6] ZHANG H Q, ZHAO Z Y, ZOU G S, et al. Failure analysis and reliability evaluation of silver-sintered die attachment for high-temperature applications[J]. Microelectronics Reliability, 2019, 94: 46-55.
[7] 杨婉春, 胡少伟, 祝温泊, 等. 低温烧结纳米银膏研究进展[J]. 焊接学报, 2022, 43(11): 137-146.
[8] 官紫妍, 吴丰顺, 周龙早, 等. 功率模块纳米银烧结技术研究进展[J]. 电子工艺技术, 2023, 44(4): 1-6.
[9] 董宏伟, 张冠星, 董显, 等. 纳米银焊膏的研究进展[J]. 材料导报, 2021, 35(S2): 341-345.
[10] WANG M Y, MEI Y H, HU W B, et al. Pressureless sintered-silver as die attachment for bonding Si and SiC chips on silver, gold, copper, and nickel metallization for power electronics packaging: The practice and science[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics, 2022, 10(2): 2645-2655.
[11] YU F, JOHNSON R W, HAMILTON M C. Pressureless sintering of microscale silver paste for 300 ℃ applications[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2015, 5(9): 1258-1264.
[12] ZHANG H Q, WANG W G, BAI H L, et al. Microstructural and mechanical evolution of silver sintering die attach for SiC power devices during high temperature applications[J]. Journal of Alloys and Compounds, 2019, 774: 487-494.
[13] SU S N, HAMASHA S, HAMASHA K. Effect of surface finish on the shear properties of SnAgCu-based solder alloys[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2019, 9(8): 1473-1485.
[14] LIN L T, LI X, ZHANG H Y. An explanation for the effect of Au surface finish on the quality of sintered Ag-Au joints[J]. Applied Surface Science, 2023, 615: 156356.
[15] PAKNEJAD S A, DUMAS G, WEST G, et al. Microstructure evolution during 300 ℃ storage of sintered Ag nanoparticles on Ag and Au substrates[J]. Journal of Alloys and Compounds, 2014, 617: 994-1001.
[16] FAN T K, ZHANG H, SHANG P J, et al. Effect of electroplated Au layer on bonding performance of Ag pastes[J]. Journal of Alloys and Compounds, 2018, 731: 1280-1287.
[17] XU Q Y, MEI Y H, LI X, et al. Correlation between interfacial microstructure and bonding strength of sintered nanosilver on ENIG and electroplated Ni/Au direct-bond-copper (DBC) substrates[J]. Journal of Alloys and Compounds, 2016, 675: 317-324.
[18] LIN J Y, NAMBU S, PONGMORAKOT K, et al. Effect of surface roughness on bonding interface formation of steel and Ni by ultrasonic welding[J]. Science and Technology of Welding and Joining, 2020, 25(2): 157-163.
[19] WANG M Y, MEI Y H, LI X, et al. How to determine surface roughness of copper substrate for robust pressureless sintered silver in air[J]. Materials Letters, 2018, 228: 327-330.
[20] MASSON A, BUTTAY C, MOREL H, et al. High-temperature die-attaches for SiC power devices[C]// Proceedings of the 2011 14th European Conference on Power Electronics and Applications, Birmingham, 2011: 1-10
[21] ZHENG H G, BERRY D, NGO K D T, et al. Chip-bonding on copper by pressureless sintering of nanosilver paste under controlled atmosphere[J]. IEEE Transactions on Components, Packaging and Manufacturing Technology, 2014, 4(3): 377-384.
[22] WERESZCZAK A A, VUONO D J, LIANG Z X, et al. Sintered silver joint strength dependence on substrate topography and attachment pad geometry[C]// 2012 7th International Conference on Integrated Power Electronics Systems (CIPS), Nuremberg, 2012: 1-6.
[23] 吴炜祯, 杨帆, 胡博, 等. 宽禁带半导体用烧结银膏与金属化基板连接机制研究[J]. 机车电传动, 2022(6): 149-155.

中国半导体行业协会封装分会会刊

中国电子学会电子制造与封装技术分会会刊

镀银板表面粗糙度对纳米银焊膏快速烧结互连质量的影响

Effect of Surface Roughness of Silver-Plated Plates on the Quality of Rapidly Sintered Interconnections with Nano Silver Solder Paste

PDF

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 3

编辑推荐

Metrics

本文评价

[1]	张宸赫,李盼桢,董浩楠,陈柏杉,黄哲,唐思危,马运柱,刘文胜. 高功率半导体用纳米银焊膏的研究现状^*[J]. 电子与封装, 2024, 24(5): 50203-.
[2]	王刘珏, 顾林, 郑利华, 李居强. 纳米银焊膏贴装片式电阻的可靠性研究^*[J]. 电子与封装, 2023, 23(8): 80204-.
[3]	吉美宁;常明超. 基于梅花形点胶的表面安装元件粘接工艺改进[J]. 电子与封装, 2022, 22(1): 10205-.